Characterization of Electrical Traps Formed in Al<sub>2</sub>O<sub>3</sub> under Various ALD Conditions

Characterization of Electrical Traps Formed in Al<sub>2</sub>O<sub>3</sub> under Various ALD Conditions

Frequency dispersion in the accumulation region seen in multifrequency capacitance–voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to b...

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Bibliographic Details
Main Authors:	Md. Mamunur Rahman, Ki-Yong Shin, Tae-Woo Kim
Format:	Article
Language:	English
Published:	MDPI AG 2020-12-01
Series:	Materials
Subjects:	ALD border trap high-<i>k</i> interface trap III–V semiconductors
Online Access:	https://www.mdpi.com/1996-1944/13/24/5809

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