| Summary: | In this paper, five groups of industrial aluminium back-surface-field (Al-BSF) solar cells were made from silicon wafers from different locations of a B-doped Czochralski silicon ingot. Then, we performed the first LID (45 °C, 1 sun, 12 h), regeneration (100 °C, 1 sun, 24 h), and second LID (45 °C, 1 sun, 12 h) treatments on the cells, and measured the in-situ changes of their <i>I</i>-<i>V</i> characteristic parameters by using an <i>I</i>-<i>V</i> tester during the experiment. The cells were also characterized by Suns-<i>V</i><sub>oc</sub> measurement, full-area light beam induced current scanning, and external quantum efficiency measurement at the four breakpoints of treatments (before and after the first LID, after regeneration and the second LID). It was found that the LID and regeneration of the Al-BSF solar cells can be explained by the LID and regeneration reaction of B-O defects and the LID caused by dissociation of Fe-B pairs. After regeneration, the relative decay rate of efficiency decreased from 2.75–3.8% during the first LID to 0.42–1.23% during the second LID, indicating that regeneration treatment (100 °C, 1 sun, 24 h) can improve the anti-LID ability of Al-BSF solar cells.
|
|---|