Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
We study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chirped QWD layers show emission spectra centered at 10...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-09-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/10/10/1090 |
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| author | Mikhail V. Maximov Nikita Yu. Gordeev Yuri M. Shernyakov Grigoriy O. Kornyshov Artem A. Beckman Alexey S. Payusov Sergey A. Mintairov Nikolay A. Kalyuzhnyy Marina M. Kulagina Alexey E. Zhukov |
| author_facet | Mikhail V. Maximov Nikita Yu. Gordeev Yuri M. Shernyakov Grigoriy O. Kornyshov Artem A. Beckman Alexey S. Payusov Sergey A. Mintairov Nikolay A. Kalyuzhnyy Marina M. Kulagina Alexey E. Zhukov |
| author_sort | Mikhail V. Maximov |
| collection | DOAJ |
| description | We study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chirped QWD layers show emission spectra centered at 1030 nm with a full-width at half-maximum of 80 nm and an output power of 2 mW. In a 250 µm long SLD with a tilted stripe that has an increased output loss, the width of the emission spectra is 113 nm at 20 °C and 120 nm at 60 °C. |
| first_indexed | 2024-03-10T20:57:31Z |
| format | Article |
| id | doaj.art-52dec16217a74f92866751ab6b579778 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-10T20:57:31Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-52dec16217a74f92866751ab6b5797782023-11-19T17:46:52ZengMDPI AGPhotonics2304-67322023-09-011010109010.3390/photonics10101090Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot LayersMikhail V. Maximov0Nikita Yu. Gordeev1Yuri M. Shernyakov2Grigoriy O. Kornyshov3Artem A. Beckman4Alexey S. Payusov5Sergey A. Mintairov6Nikolay A. Kalyuzhnyy7Marina M. Kulagina8Alexey E. Zhukov9Nanophotonics Laboratory, Alferov University, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaNanophotonics Laboratory, Alferov University, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaIoffe Institute, St. Petersburg 194021, RussiaSchool of Physics, Mathematics, and Computer Science, HSE University, St. Petersburg 190008, RussiaWe study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chirped QWD layers show emission spectra centered at 1030 nm with a full-width at half-maximum of 80 nm and an output power of 2 mW. In a 250 µm long SLD with a tilted stripe that has an increased output loss, the width of the emission spectra is 113 nm at 20 °C and 120 nm at 60 °C.https://www.mdpi.com/2304-6732/10/10/1090superluminescent diodequantum well-dotsbroadband emission |
| spellingShingle | Mikhail V. Maximov Nikita Yu. Gordeev Yuri M. Shernyakov Grigoriy O. Kornyshov Artem A. Beckman Alexey S. Payusov Sergey A. Mintairov Nikolay A. Kalyuzhnyy Marina M. Kulagina Alexey E. Zhukov Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers Photonics superluminescent diode quantum well-dots broadband emission |
| title | Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers |
| title_full | Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers |
| title_fullStr | Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers |
| title_full_unstemmed | Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers |
| title_short | Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers |
| title_sort | superluminescent diodes based on chirped ingaas gaas quantum well dot layers |
| topic | superluminescent diode quantum well-dots broadband emission |
| url | https://www.mdpi.com/2304-6732/10/10/1090 |
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