Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3
A fabrication technique using Al2O3-passivated local contacts was employed to produce narrow-bandgap CuInSe2 (CISe) photoabsorbers, which are well-suited as bottom cell materials in tandem devices. However, the performances of CISe cells with narrow bandgaps are impeded by the recombination of charg...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S246821792300117X |
| _version_ | 1797301380913823744 |
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| author | Dong-Hwan Jeon Si-Nae Park Jae-Baek Lee Young-Ill Kim Kee-Jeong Yang Jin-Kyu Kang Dae-Hwan Kim Shi-Joon Sung Dae-Kue Hwang |
| author_facet | Dong-Hwan Jeon Si-Nae Park Jae-Baek Lee Young-Ill Kim Kee-Jeong Yang Jin-Kyu Kang Dae-Hwan Kim Shi-Joon Sung Dae-Kue Hwang |
| author_sort | Dong-Hwan Jeon |
| collection | DOAJ |
| description | A fabrication technique using Al2O3-passivated local contacts was employed to produce narrow-bandgap CuInSe2 (CISe) photoabsorbers, which are well-suited as bottom cell materials in tandem devices. However, the performances of CISe cells with narrow bandgaps are impeded by the recombination of charge carriers, which reduces the open-circuit voltage (VOC). To overcome this limitation, an additional Al2O3 passivation layer was added to CISe solar cells. This enhanced the VOC while maintaining a spectral response of up to 1.0 eV, thereby boosting the photovoltaic conversion efficiency of the devices. Further, the Al2O3 passivation layer within the CISe absorber effectively mitigated the recombination of charge carriers, resulting in a substantial improvement in efficiency. Specifically, the Al2O3-passivated local contact hindered the charge-carrier recombination at the rear contact, leading to a marked increase in the VOC. Consequently, the overall photovoltaic conversion efficiency increased significantly from 10.4 % to 13 %. These results are expected to greatly further the development of CISe solar cells and achieve remarkable photovoltaic conversion efficiencies. |
| first_indexed | 2024-03-07T23:21:43Z |
| format | Article |
| id | doaj.art-52ded78605d54ea48cb80bd12f20f333 |
| institution | Directory Open Access Journal |
| issn | 2468-2179 |
| language | English |
| last_indexed | 2024-03-07T23:21:43Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Science: Advanced Materials and Devices |
| spelling | doaj.art-52ded78605d54ea48cb80bd12f20f3332024-02-21T05:29:27ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792024-03-0191100648Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3Dong-Hwan Jeon0Si-Nae Park1Jae-Baek Lee2Young-Ill Kim3Kee-Jeong Yang4Jin-Kyu Kang5Dae-Hwan Kim6Shi-Joon Sung7Dae-Kue Hwang8Daegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Daegu, 41566, South KoreaDaegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South KoreaDaegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South KoreaDaegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South KoreaDaegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South KoreaDaegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South KoreaDaegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South Korea; Corresponding author.Daegu Gyeongbuk Institute of Science & Technology (DGIST), Research Center for Thin Film Solar Cells, Dalseong-gun, Daegu, 42988, South Korea; Corresponding author.A fabrication technique using Al2O3-passivated local contacts was employed to produce narrow-bandgap CuInSe2 (CISe) photoabsorbers, which are well-suited as bottom cell materials in tandem devices. However, the performances of CISe cells with narrow bandgaps are impeded by the recombination of charge carriers, which reduces the open-circuit voltage (VOC). To overcome this limitation, an additional Al2O3 passivation layer was added to CISe solar cells. This enhanced the VOC while maintaining a spectral response of up to 1.0 eV, thereby boosting the photovoltaic conversion efficiency of the devices. Further, the Al2O3 passivation layer within the CISe absorber effectively mitigated the recombination of charge carriers, resulting in a substantial improvement in efficiency. Specifically, the Al2O3-passivated local contact hindered the charge-carrier recombination at the rear contact, leading to a marked increase in the VOC. Consequently, the overall photovoltaic conversion efficiency increased significantly from 10.4 % to 13 %. These results are expected to greatly further the development of CISe solar cells and achieve remarkable photovoltaic conversion efficiencies.http://www.sciencedirect.com/science/article/pii/S246821792300117XCISeNarrow bandgapBack contactPassivationThin film solar cells |
| spellingShingle | Dong-Hwan Jeon Si-Nae Park Jae-Baek Lee Young-Ill Kim Kee-Jeong Yang Jin-Kyu Kang Dae-Hwan Kim Shi-Joon Sung Dae-Kue Hwang Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3 Journal of Science: Advanced Materials and Devices CISe Narrow bandgap Back contact Passivation Thin film solar cells |
| title | Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3 |
| title_full | Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3 |
| title_fullStr | Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3 |
| title_full_unstemmed | Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3 |
| title_short | Enhancing the open-circuit voltage in narrow-bandgap CuInSe2 solar cells via local contact passivation with Al2O3 |
| title_sort | enhancing the open circuit voltage in narrow bandgap cuinse2 solar cells via local contact passivation with al2o3 |
| topic | CISe Narrow bandgap Back contact Passivation Thin film solar cells |
| url | http://www.sciencedirect.com/science/article/pii/S246821792300117X |
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