Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes

<p>Abstract</p> <p>Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the determinis...

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Main Authors: Harazim Stefan, Feng Ping, Sanchez Samuel, Deneke Christoph, Mei Yongfeng, Schmidt Oliver
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/215
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author Harazim Stefan
Feng Ping
Sanchez Samuel
Deneke Christoph
Mei Yongfeng
Schmidt Oliver
author_facet Harazim Stefan
Feng Ping
Sanchez Samuel
Deneke Christoph
Mei Yongfeng
Schmidt Oliver
author_sort Harazim Stefan
collection DOAJ
description <p>Abstract</p> <p>Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.</p>
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spelling doaj.art-532298d1a5264372951f6f078c53b64d2023-08-02T06:22:19ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161215Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranesHarazim StefanFeng PingSanchez SamuelDeneke ChristophMei YongfengSchmidt Oliver<p>Abstract</p> <p>Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.</p>http://www.nanoscalereslett.com/content/6/1/215
spellingShingle Harazim Stefan
Feng Ping
Sanchez Samuel
Deneke Christoph
Mei Yongfeng
Schmidt Oliver
Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
Nanoscale Research Letters
title Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_full Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_fullStr Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_full_unstemmed Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_short Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_sort integrated sensitive on chip ion field effect transistors based on wrinkled ingaas nanomembranes
url http://www.nanoscalereslett.com/content/6/1/215
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AT fengping integratedsensitiveonchipionfieldeffecttransistorsbasedonwrinkledingaasnanomembranes
AT sanchezsamuel integratedsensitiveonchipionfieldeffecttransistorsbasedonwrinkledingaasnanomembranes
AT denekechristoph integratedsensitiveonchipionfieldeffecttransistorsbasedonwrinkledingaasnanomembranes
AT meiyongfeng integratedsensitiveonchipionfieldeffecttransistorsbasedonwrinkledingaasnanomembranes
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