Understanding effect of distortions and vacancies in wurtzite AlScN ferroelectric memory materials: Vacancy-induced multiple defect state types and relaxation dependence in transition energy levels
Energy-efficient compact alternatives to fully digital computing strategies could be achieved by implementations of artificial neural networks (ANNs) that borrow analog techniques. In-memory computing based on crossbar device architectures with memristive materials systems that execute, in an analog...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0126651 |