Calculation of Impurity Diffusion in Siiicon
The paper contains information about analytical solutions of diffusion equation which have been obtained for the first time. An example of calculation of diffusion processes in silicon during manufacturing of semiconductor devices is considered in the paper. Mathematical functions suitable for obtai...
| Main Author: | |
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| Format: | Article |
| Language: | Russian |
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Belarusian National Technical University
2004-08-01
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| Series: | Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika |
| Online Access: | https://energy.bntu.by/jour/article/view/1155 |
| _version_ | 1797879955597557760 |
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| author | V. А. Bondarev |
| author_facet | V. А. Bondarev |
| author_sort | V. А. Bondarev |
| collection | DOAJ |
| description | The paper contains information about analytical solutions of diffusion equation which have been obtained for the first time. An example of calculation of diffusion processes in silicon during manufacturing of semiconductor devices is considered in the paper. Mathematical functions suitable for obtaining analytical formulae are determined with the help of a detailed analysis of physical model. Such functions make it possible to find approximations from below and above to the solution of the given problem that greatly reduces the calculation time if computer programs for three-dimensional |
| first_indexed | 2024-04-10T02:56:51Z |
| format | Article |
| id | doaj.art-53c6456d240e4efab3a3bc5e5dedbbde |
| institution | Directory Open Access Journal |
| issn | 1029-7448 2414-0341 |
| language | Russian |
| last_indexed | 2024-04-10T02:56:51Z |
| publishDate | 2004-08-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika |
| spelling | doaj.art-53c6456d240e4efab3a3bc5e5dedbbde2023-03-13T07:41:42ZrusBelarusian National Technical UniversityIzvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika1029-74482414-03412004-08-0104455110.21122/1029-7448-2004-0-4-45-511114Calculation of Impurity Diffusion in SiiiconV. А. Bondarev0Белорусский национальный технический университетThe paper contains information about analytical solutions of diffusion equation which have been obtained for the first time. An example of calculation of diffusion processes in silicon during manufacturing of semiconductor devices is considered in the paper. Mathematical functions suitable for obtaining analytical formulae are determined with the help of a detailed analysis of physical model. Such functions make it possible to find approximations from below and above to the solution of the given problem that greatly reduces the calculation time if computer programs for three-dimensionalhttps://energy.bntu.by/jour/article/view/1155 |
| spellingShingle | V. А. Bondarev Calculation of Impurity Diffusion in Siiicon Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika |
| title | Calculation of Impurity Diffusion in Siiicon |
| title_full | Calculation of Impurity Diffusion in Siiicon |
| title_fullStr | Calculation of Impurity Diffusion in Siiicon |
| title_full_unstemmed | Calculation of Impurity Diffusion in Siiicon |
| title_short | Calculation of Impurity Diffusion in Siiicon |
| title_sort | calculation of impurity diffusion in siiicon |
| url | https://energy.bntu.by/jour/article/view/1155 |
| work_keys_str_mv | AT vabondarev calculationofimpuritydiffusioninsiiicon |