Calculation of Impurity Diffusion in Siiicon

Calculation of Impurity Diffusion in Siiicon

The paper contains information about analytical solutions of diffusion equation which have been obtained for the first time. An example of calculation of diffusion processes in silicon during manufacturing of semiconductor devices is considered in the paper. Mathematical functions suitable for obtai...

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Bibliographic Details
Main Author:	V. А. Bondarev
Format:	Article
Language:	Russian
Published:	Belarusian National Technical University 2004-08-01
Series:	Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika
Online Access:	https://energy.bntu.by/jour/article/view/1155

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