Current-driven writing process in antiferromagnetic Mn2Au for memory applications
Antiferromagnets have an inbuilt resilience to external magnetic fields and intrinsically fast dynamics, properties that have garnered interest in the hope that they could be used for antiferromagnet memories. Central to this are Neel spin-orbit torques, which can switch the individual sublattices o...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-37569-8 |
| _version_ | 1797849961940910080 |
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| author | S. Reimers Y. Lytvynenko Y. R. Niu E. Golias B. Sarpi L. S. I. Veiga T. Denneulin A. Kovács R. E. Dunin-Borkowski J. Bläßer M. Kläui M. Jourdan |
| author_facet | S. Reimers Y. Lytvynenko Y. R. Niu E. Golias B. Sarpi L. S. I. Veiga T. Denneulin A. Kovács R. E. Dunin-Borkowski J. Bläßer M. Kläui M. Jourdan |
| author_sort | S. Reimers |
| collection | DOAJ |
| description | Antiferromagnets have an inbuilt resilience to external magnetic fields and intrinsically fast dynamics, properties that have garnered interest in the hope that they could be used for antiferromagnet memories. Central to this are Neel spin-orbit torques, which can switch the individual sublattices of the antiferromagnet. Here, Reimers et al demonstrate complete and reversible current induced switching of the Neel vector in Mn2Au. |
| first_indexed | 2024-04-09T18:52:40Z |
| format | Article |
| id | doaj.art-53d6611592534852bc621e6364694fe5 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-09T18:52:40Z |
| publishDate | 2023-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-53d6611592534852bc621e6364694fe52023-04-09T11:22:08ZengNature PortfolioNature Communications2041-17232023-04-011411610.1038/s41467-023-37569-8Current-driven writing process in antiferromagnetic Mn2Au for memory applicationsS. Reimers0Y. Lytvynenko1Y. R. Niu2E. Golias3B. Sarpi4L. S. I. Veiga5T. Denneulin6A. Kovács7R. E. Dunin-Borkowski8J. Bläßer9M. Kläui10M. Jourdan11Institut für Physik, Johannes Gutenberg-Universität MainzInstitut für Physik, Johannes Gutenberg-Universität MainzMAX IV LaboratoryMAX IV LaboratoryDiamond Light Source, ChiltonDiamond Light Source, ChiltonErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum JülichErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum JülichErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum JülichInstitut für Physik, Johannes Gutenberg-Universität MainzInstitut für Physik, Johannes Gutenberg-Universität MainzInstitut für Physik, Johannes Gutenberg-Universität MainzAntiferromagnets have an inbuilt resilience to external magnetic fields and intrinsically fast dynamics, properties that have garnered interest in the hope that they could be used for antiferromagnet memories. Central to this are Neel spin-orbit torques, which can switch the individual sublattices of the antiferromagnet. Here, Reimers et al demonstrate complete and reversible current induced switching of the Neel vector in Mn2Au.https://doi.org/10.1038/s41467-023-37569-8 |
| spellingShingle | S. Reimers Y. Lytvynenko Y. R. Niu E. Golias B. Sarpi L. S. I. Veiga T. Denneulin A. Kovács R. E. Dunin-Borkowski J. Bläßer M. Kläui M. Jourdan Current-driven writing process in antiferromagnetic Mn2Au for memory applications Nature Communications |
| title | Current-driven writing process in antiferromagnetic Mn2Au for memory applications |
| title_full | Current-driven writing process in antiferromagnetic Mn2Au for memory applications |
| title_fullStr | Current-driven writing process in antiferromagnetic Mn2Au for memory applications |
| title_full_unstemmed | Current-driven writing process in antiferromagnetic Mn2Au for memory applications |
| title_short | Current-driven writing process in antiferromagnetic Mn2Au for memory applications |
| title_sort | current driven writing process in antiferromagnetic mn2au for memory applications |
| url | https://doi.org/10.1038/s41467-023-37569-8 |
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