Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer
In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO<sub>2</sub> layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag mi...
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| Format: | Article |
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MDPI AG
2020-09-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/10/905 |
| _version_ | 1797552210949701632 |
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| author | Junhyeok Choi Sungjun Kim |
| author_facet | Junhyeok Choi Sungjun Kim |
| author_sort | Junhyeok Choi |
| collection | DOAJ |
| description | In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO<sub>2</sub> layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO<sub>2</sub>/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO<sub>2</sub>/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO<sub>2</sub> inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO<sub>2</sub>/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO<sub>2</sub>/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices. |
| first_indexed | 2024-03-10T15:56:45Z |
| format | Article |
| id | doaj.art-53df7b5ffa1f400cab171cdbfe204eb6 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T15:56:45Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-53df7b5ffa1f400cab171cdbfe204eb62023-11-20T15:35:16ZengMDPI AGMicromachines2072-666X2020-09-01111090510.3390/mi11100905Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> LayerJunhyeok Choi0Sungjun Kim1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaIn this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO<sub>2</sub> layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO<sub>2</sub>/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO<sub>2</sub>/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO<sub>2</sub> inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO<sub>2</sub>/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO<sub>2</sub>/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.https://www.mdpi.com/2072-666X/11/10/905memristorneuromorphic computingresistive switchingzirconium nitride |
| spellingShingle | Junhyeok Choi Sungjun Kim Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer Micromachines memristor neuromorphic computing resistive switching zirconium nitride |
| title | Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer |
| title_full | Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer |
| title_fullStr | Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer |
| title_full_unstemmed | Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer |
| title_short | Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer |
| title_sort | improved stability and controllability in zrn based resistive memory device by inserting tio sub 2 sub layer |
| topic | memristor neuromorphic computing resistive switching zirconium nitride |
| url | https://www.mdpi.com/2072-666X/11/10/905 |
| work_keys_str_mv | AT junhyeokchoi improvedstabilityandcontrollabilityinzrnbasedresistivememorydevicebyinsertingtiosub2sublayer AT sungjunkim improvedstabilityandcontrollabilityinzrnbasedresistivememorydevicebyinsertingtiosub2sublayer |