High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature
H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H...
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MDPI AG
2023-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/8/1422 |
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| author | Daoqin Wang Zongjin Jiang Linhan Li Deliang Zhu Chunfeng Wang Shun Han Ming Fang Xinke Liu Wenjun Liu Peijiang Cao Youming Lu |
| author_facet | Daoqin Wang Zongjin Jiang Linhan Li Deliang Zhu Chunfeng Wang Shun Han Ming Fang Xinke Liu Wenjun Liu Peijiang Cao Youming Lu |
| author_sort | Daoqin Wang |
| collection | DOAJ |
| description | H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H (4 nm)/ZnO (20 nm) double active layers by magnetron sputtering at room temperature, and studied the effect of the hydrogen flow ratio on the devices’ performance. ZnO:H/ZnO-TFT has the best overall performance when H<sub>2</sub>/(Ar + H<sub>2</sub>) = 0.13% with a mobility of 12.10 cm<sup>2</sup>/Vs, an on/off current ratio of 2.32 × 10<sup>7</sup>, a subthreshold swing of 0.67 V/Dec, and a threshold voltage of 1.68 V, which is significantly better than the performance of single active layer ZnO:H-TFTs. This exhibits that the transport mechanism of carriers in double active layer devices is more complicated. On one hand, increasing the hydrogen flow ratio can more effectively suppress the oxygen-related defect states, thus reducing the carrier scattering and increasing the carrier concentration. On the other hand, the energy band analysis shows that electrons accumulate at the interface of the ZnO layer close to the ZnO:H layer, providing an additional path for carrier transport. Our research exhibits that the combination of a simple hydrogen doping process and double active layer construction can achieve the fabrication of high-performance ZnO-based TFTs, and that the whole room temperature process also provides important reference value for the subsequent development of flexible devices. |
| first_indexed | 2024-03-11T04:40:17Z |
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| language | English |
| last_indexed | 2024-03-11T04:40:17Z |
| publishDate | 2023-04-01 |
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| series | Nanomaterials |
| spelling | doaj.art-542e6732e2bf4665b59176b375d85e172023-11-17T20:44:15ZengMDPI AGNanomaterials2079-49912023-04-01138142210.3390/nano13081422High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room TemperatureDaoqin Wang0Zongjin Jiang1Linhan Li2Deliang Zhu3Chunfeng Wang4Shun Han5Ming Fang6Xinke Liu7Wenjun Liu8Peijiang Cao9Youming Lu10Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Special Functional Materials, Guangdong Research Centre for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaH doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H (4 nm)/ZnO (20 nm) double active layers by magnetron sputtering at room temperature, and studied the effect of the hydrogen flow ratio on the devices’ performance. ZnO:H/ZnO-TFT has the best overall performance when H<sub>2</sub>/(Ar + H<sub>2</sub>) = 0.13% with a mobility of 12.10 cm<sup>2</sup>/Vs, an on/off current ratio of 2.32 × 10<sup>7</sup>, a subthreshold swing of 0.67 V/Dec, and a threshold voltage of 1.68 V, which is significantly better than the performance of single active layer ZnO:H-TFTs. This exhibits that the transport mechanism of carriers in double active layer devices is more complicated. On one hand, increasing the hydrogen flow ratio can more effectively suppress the oxygen-related defect states, thus reducing the carrier scattering and increasing the carrier concentration. On the other hand, the energy band analysis shows that electrons accumulate at the interface of the ZnO layer close to the ZnO:H layer, providing an additional path for carrier transport. Our research exhibits that the combination of a simple hydrogen doping process and double active layer construction can achieve the fabrication of high-performance ZnO-based TFTs, and that the whole room temperature process also provides important reference value for the subsequent development of flexible devices.https://www.mdpi.com/2079-4991/13/8/1422thin-film transistorsZnO:H/ZnO double active layersRF magnetron sputteringroom temperature |
| spellingShingle | Daoqin Wang Zongjin Jiang Linhan Li Deliang Zhu Chunfeng Wang Shun Han Ming Fang Xinke Liu Wenjun Liu Peijiang Cao Youming Lu High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature Nanomaterials thin-film transistors ZnO:H/ZnO double active layers RF magnetron sputtering room temperature |
| title | High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature |
| title_full | High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature |
| title_fullStr | High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature |
| title_full_unstemmed | High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature |
| title_short | High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature |
| title_sort | high performance thin film transistors with zno h zno double active layers fabricated at room temperature |
| topic | thin-film transistors ZnO:H/ZnO double active layers RF magnetron sputtering room temperature |
| url | https://www.mdpi.com/2079-4991/13/8/1422 |
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