High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H...

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Bibliographic Details
Main Authors: Daoqin Wang, Zongjin Jiang, Linhan Li, Deliang Zhu, Chunfeng Wang, Shun Han, Ming Fang, Xinke Liu, Wenjun Liu, Peijiang Cao, Youming Lu
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Nanomaterials
Subjects:
thin-film transistors
ZnO:H/ZnO double active layers
RF magnetron sputtering
room temperature
Online Access:https://www.mdpi.com/2079-4991/13/8/1422

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