Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room temperature holding for the MOSFET technologies. Neve...
Main Authors: | Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-10-01
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Series: | Journal of Low Power Electronics and Applications |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9268/12/4/58 |
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