Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits

Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits

Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room temperature holding for the MOSFET technologies. Neve...

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Bibliographic Details
Main Authors: Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Journal of Low Power Electronics and Applications
Subjects:
TFET
ambipolarity
digital circuits
power dissipation
fault tolerance
band to band tunneling
Online Access:https://www.mdpi.com/2079-9268/12/4/58

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