Nanostructure NiO films prepared by PLD and their optoelectronic properties

NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the parti...

Full description

Bibliographic Details
Main Authors: Doaa Jbaier, Jehan Simon, Khawla Khashan
Format: Article
Language:English
Published: Unviversity of Technology- Iraq 2015-06-01
Series:Engineering and Technology Journal
Subjects:
Online Access:https://etj.uotechnology.edu.iq/article_108909_1dddfcbbb5139eaa2df54d9030f16224.pdf
Description
Summary:NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying.
ISSN:1681-6900
2412-0758