Nanostructure NiO films prepared by PLD and their optoelectronic properties
NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the parti...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Unviversity of Technology- Iraq
2015-06-01
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Series: | Engineering and Technology Journal |
Subjects: | |
Online Access: | https://etj.uotechnology.edu.iq/article_108909_1dddfcbbb5139eaa2df54d9030f16224.pdf |
Summary: | NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying. |
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ISSN: | 1681-6900 2412-0758 |