A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/22/4021 |
| _version_ | 1797464352878493696 |
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| author | Cong Peng Huixue Huang Meng Xu Longlong Chen Xifeng Li Jianhua Zhang |
| author_facet | Cong Peng Huixue Huang Meng Xu Longlong Chen Xifeng Li Jianhua Zhang |
| author_sort | Cong Peng |
| collection | DOAJ |
| description | In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and drain regions of IGZO was approximately 365 Ω/□, and there was no significant change within a month. The device parameters of mobility, threshold voltage, subthreshold swing, and current switching ratio of the fabricated device were 15.15 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, 0.09 V, 0.15 V/dec, and higher than 10<sup>9</sup>, respectively. The threshold voltage drift under negative bias illumination stress was −0.34 V. In addition, a lower channel width-normalized contact resistance of 9.86 Ω·cm was obtained. |
| first_indexed | 2024-03-09T18:05:56Z |
| format | Article |
| id | doaj.art-548f95a13ec74064bae7fe5545bccaf7 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T18:05:56Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-548f95a13ec74064bae7fe5545bccaf72023-11-24T09:28:22ZengMDPI AGNanomaterials2079-49912022-11-011222402110.3390/nano12224021A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °CCong Peng0Huixue Huang1Meng Xu2Longlong Chen3Xifeng Li4Jianhua Zhang5Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, ChinaIn this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and drain regions of IGZO was approximately 365 Ω/□, and there was no significant change within a month. The device parameters of mobility, threshold voltage, subthreshold swing, and current switching ratio of the fabricated device were 15.15 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, 0.09 V, 0.15 V/dec, and higher than 10<sup>9</sup>, respectively. The threshold voltage drift under negative bias illumination stress was −0.34 V. In addition, a lower channel width-normalized contact resistance of 9.86 Ω·cm was obtained.https://www.mdpi.com/2079-4991/12/22/4021InGaZnOself-aligned top-gatethin-film transistors |
| spellingShingle | Cong Peng Huixue Huang Meng Xu Longlong Chen Xifeng Li Jianhua Zhang A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C Nanomaterials InGaZnO self-aligned top-gate thin-film transistors |
| title | A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C |
| title_full | A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C |
| title_fullStr | A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C |
| title_full_unstemmed | A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C |
| title_short | A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C |
| title_sort | simple doping process achieved by modifying the passivation layer for self aligned top gate in ga zn o thin film transistors at 200 °c |
| topic | InGaZnO self-aligned top-gate thin-film transistors |
| url | https://www.mdpi.com/2079-4991/12/22/4021 |
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