Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications
Abstract Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE‐LED) and organic OLED architectures as transport layers. Solution‐processed metal oxide inks have...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-05-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300035 |
| _version_ | 1797772451331964928 |
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| author | Sergio González Giovanni Vescio Juan Luis Frieiro Alina Hauser Flavio Linardi Julian López‐Vidrier Marek Oszajca Sergi Hernández Albert Cirera Blas Garrido |
| author_facet | Sergio González Giovanni Vescio Juan Luis Frieiro Alina Hauser Flavio Linardi Julian López‐Vidrier Marek Oszajca Sergi Hernández Albert Cirera Blas Garrido |
| author_sort | Sergio González |
| collection | DOAJ |
| description | Abstract Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE‐LED) and organic OLED architectures as transport layers. Solution‐processed metal oxide inks have already been demonstrated, although there is still a need for high‐quality inkjet‐printable metal oxide inks with a thermal post‐process below 200 °C. The set of inks in this work are adapted from low‐boiling point colloidal suspensions of metal oxide nanoparticles synthesized via flame spray pyrolysis. High quality, pinhole‐ and wrinkle‐free inkjet‐printed layers are obtained at low temperatures through vacuum oven post process, as proven by scanning electron microscopy. The crystallinity of the layers is confirmed by X‐ray diffraction, showing the expected hexagonal and cubic structures respectively for ZnO and NiO. The thin film layers reach over 70% (ZnO) and 90% (NiO) transparency in the visible spectrum. Their implementation in the inkjet‐printed p–n diode shows excellent I–V rectifying behavior with an ON/OFF ratio of two orders of magnitude at ±3 V and a forward threshold voltage of 2 V. Furthermore, the device exhibits an increase in photocurrent around four orders of magnitude when illuminated under a 1‐sun solar simulator. |
| first_indexed | 2024-03-12T21:51:05Z |
| format | Article |
| id | doaj.art-54b18eb98bbe47b0a6771cb611e19cc0 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T21:51:05Z |
| publishDate | 2023-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-54b18eb98bbe47b0a6771cb611e19cc02023-07-26T01:40:26ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-05-011015n/an/a10.1002/admi.202300035Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection ApplicationsSergio González0Giovanni Vescio1Juan Luis Frieiro2Alina Hauser3Flavio Linardi4Julian López‐Vidrier5Marek Oszajca6Sergi Hernández7Albert Cirera8Blas Garrido9MIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainMIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainMIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainAvantama AG Laubisruetistrasse 50 Staefa 8712 SwitzerlandAvantama AG Laubisruetistrasse 50 Staefa 8712 SwitzerlandMIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainAvantama AG Laubisruetistrasse 50 Staefa 8712 SwitzerlandMIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainMIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainMIND‐IN2UB Department of Electronics and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona 08028 SpainAbstract Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE‐LED) and organic OLED architectures as transport layers. Solution‐processed metal oxide inks have already been demonstrated, although there is still a need for high‐quality inkjet‐printable metal oxide inks with a thermal post‐process below 200 °C. The set of inks in this work are adapted from low‐boiling point colloidal suspensions of metal oxide nanoparticles synthesized via flame spray pyrolysis. High quality, pinhole‐ and wrinkle‐free inkjet‐printed layers are obtained at low temperatures through vacuum oven post process, as proven by scanning electron microscopy. The crystallinity of the layers is confirmed by X‐ray diffraction, showing the expected hexagonal and cubic structures respectively for ZnO and NiO. The thin film layers reach over 70% (ZnO) and 90% (NiO) transparency in the visible spectrum. Their implementation in the inkjet‐printed p–n diode shows excellent I–V rectifying behavior with an ON/OFF ratio of two orders of magnitude at ±3 V and a forward threshold voltage of 2 V. Furthermore, the device exhibits an increase in photocurrent around four orders of magnitude when illuminated under a 1‐sun solar simulator.https://doi.org/10.1002/admi.202300035diodeheterojunctioninkjet printingmetal oxidesnanoparticlesNiO |
| spellingShingle | Sergio González Giovanni Vescio Juan Luis Frieiro Alina Hauser Flavio Linardi Julian López‐Vidrier Marek Oszajca Sergi Hernández Albert Cirera Blas Garrido Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications Advanced Materials Interfaces diode heterojunction inkjet printing metal oxides nanoparticles NiO |
| title | Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications |
| title_full | Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications |
| title_fullStr | Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications |
| title_full_unstemmed | Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications |
| title_short | Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications |
| title_sort | inkjet printed p nio n zno heterojunction diodes for photodetection applications |
| topic | diode heterojunction inkjet printing metal oxides nanoparticles NiO |
| url | https://doi.org/10.1002/admi.202300035 |
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