The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions

In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs. Nanolayers of that compositions are using in creations of quantum well devices like avalanche photodiode, QWIPs and so on.This devices needs sharp...

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Main Author: A. A. Gorskiy
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2014-08-01
Series:Тонкие химические технологии
Subjects:
Online Access:https://www.finechem-mirea.ru/jour/article/view/455
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author A. A. Gorskiy
author_facet A. A. Gorskiy
author_sort A. A. Gorskiy
collection DOAJ
description In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs. Nanolayers of that compositions are using in creations of quantum well devices like avalanche photodiode, QWIPs and so on.This devices needs sharp heterojunctions. For this purpose we used numerical studies of momentum and mass transport equations. 3D model of mixer was built in COMSOL Multiphysics. Results shows three streams: two peripheral and wide central. The shape and behavior was found independent from studying pressure ranges. That leads to applications of such gas mixer for vertical reactors of MOCVD but not for horizontal reactors.
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spelling doaj.art-54eb56cad6454ae1b277acbfdff0a8452025-03-02T10:57:32ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752014-08-01947072449The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctionsA. A. Gorskiy0M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs. Nanolayers of that compositions are using in creations of quantum well devices like avalanche photodiode, QWIPs and so on.This devices needs sharp heterojunctions. For this purpose we used numerical studies of momentum and mass transport equations. 3D model of mixer was built in COMSOL Multiphysics. Results shows three streams: two peripheral and wide central. The shape and behavior was found independent from studying pressure ranges. That leads to applications of such gas mixer for vertical reactors of MOCVD but not for horizontal reactors.https://www.finechem-mirea.ru/jour/article/view/4553d model, mocvd, movpe, horizontal rector, gas mixer, inxga1-xas, numerical studying, heterojunctions
spellingShingle A. A. Gorskiy
The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
Тонкие химические технологии
3d model, mocvd, movpe, horizontal rector, gas mixer, inxga1-xas, numerical studying, heterojunctions
title The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
title_full The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
title_fullStr The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
title_full_unstemmed The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
title_short The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
title_sort estimation of possibility of the using gas mixer for obtaining sharper mocvd grown heterojunctions
topic 3d model, mocvd, movpe, horizontal rector, gas mixer, inxga1-xas, numerical studying, heterojunctions
url https://www.finechem-mirea.ru/jour/article/view/455
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