Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey
Abstract Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations,...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2021-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-020-03467-x |
| _version_ | 1797727343878340608 |
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| author | Debarati Dey Debashis De Ali Ahmadian Ferial Ghaemi Norazak Senu |
| author_facet | Debarati Dey Debashis De Ali Ahmadian Ferial Ghaemi Norazak Senu |
| author_sort | Debarati Dey |
| collection | DOAJ |
| description | Abstract Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods. |
| first_indexed | 2024-03-12T10:58:28Z |
| format | Article |
| id | doaj.art-552a73b9570d463b9542255a178d8d6f |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T10:58:28Z |
| publishDate | 2021-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-552a73b9570d463b9542255a178d8d6f2023-09-02T06:01:13ZengSpringerOpenNanoscale Research Letters1556-276X2021-01-0116111610.1186/s11671-020-03467-xElectrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive SurveyDebarati Dey0Debashis De1Ali Ahmadian2Ferial Ghaemi3Norazak Senu4Department of Electronics and Communication Engineering, B. P. Poddar Institute of Management and TechnologyDepartment of Computer Science and Engineering, Maulana Abul Kalam Azad University of TechnologyInstitute of IR 4.0, The National University of Malaysia (UKM)Department of Chemical and Process Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia (UKM)Institute for Mathematical Research (INSPEM), Universiti Putra Malaysia (UPM)Abstract Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.https://doi.org/10.1186/s11671-020-03467-xElectrical dopingDFTNEGFFirst principleMolecular modeling |
| spellingShingle | Debarati Dey Debashis De Ali Ahmadian Ferial Ghaemi Norazak Senu Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey Nanoscale Research Letters Electrical doping DFT NEGF First principle Molecular modeling |
| title | Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey |
| title_full | Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey |
| title_fullStr | Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey |
| title_full_unstemmed | Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey |
| title_short | Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey |
| title_sort | electrically doped nanoscale devices using first principle approach a comprehensive survey |
| topic | Electrical doping DFT NEGF First principle Molecular modeling |
| url | https://doi.org/10.1186/s11671-020-03467-x |
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