Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers
We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreove...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-03-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/10/3/188 |
| _version_ | 1818308103774404608 |
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| author | Zong-Lin Li Shen-Chieh Lin Gray Lin Hui-Wen Cheng Kien-Wen Sun Chien-Ping Lee |
| author_facet | Zong-Lin Li Shen-Chieh Lin Gray Lin Hui-Wen Cheng Kien-Wen Sun Chien-Ping Lee |
| author_sort | Zong-Lin Li |
| collection | DOAJ |
| description | We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers. |
| first_indexed | 2024-12-13T07:08:57Z |
| format | Article |
| id | doaj.art-5562a9323ca34fcb98e699e62a778193 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-13T07:08:57Z |
| publishDate | 2019-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-5562a9323ca34fcb98e699e62a7781932022-12-21T23:55:44ZengMDPI AGMicromachines2072-666X2019-03-0110318810.3390/mi10030188mi10030188Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting LasersZong-Lin Li0Shen-Chieh Lin1Gray Lin2Hui-Wen Cheng3Kien-Wen Sun4Chien-Ping Lee5Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, TaiwanDepartment of Applied Chemistry, National Chiao Tung University, Hsinchu City 30010, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, TaiwanWe study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.http://www.mdpi.com/2072-666X/10/3/188photonic crystalssurface-emitting lasersmiddle infrared lasersGaSb-based lasers |
| spellingShingle | Zong-Lin Li Shen-Chieh Lin Gray Lin Hui-Wen Cheng Kien-Wen Sun Chien-Ping Lee Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers Micromachines photonic crystals surface-emitting lasers middle infrared lasers GaSb-based lasers |
| title | Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers |
| title_full | Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers |
| title_fullStr | Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers |
| title_full_unstemmed | Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers |
| title_short | Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers |
| title_sort | effect of etching depth on threshold characteristics of gasb based middle infrared photonic crystal surface emitting lasers |
| topic | photonic crystals surface-emitting lasers middle infrared lasers GaSb-based lasers |
| url | http://www.mdpi.com/2072-666X/10/3/188 |
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