On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector
Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , B...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2005-03-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_181715_d0f1adaa145d3d3cd6e64ee83c31864c.pdf |
| _version_ | 1797325067510611968 |
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| author | Raid Ismail Khalid Al - Ta'ai Manaf Ismail |
| author_facet | Raid Ismail Khalid Al - Ta'ai Manaf Ismail |
| author_sort | Raid Ismail |
| collection | DOAJ |
| description | Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , Bi , Ag , and Al were deposited on the sensitive area of the detectors ( donor side ) . On the base of the transmission and absorption phenomena of the deposited films , peak response data of these detectors that conventionally at near IR ( 850-900 nm ) before deposition was reduced and resulted in peak response at 600 ± 25 nm after deposition . |
| first_indexed | 2024-03-08T06:04:29Z |
| format | Article |
| id | doaj.art-55bb6232ca0348d6924105febbfa21e2 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:04:29Z |
| publishDate | 2005-03-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-55bb6232ca0348d6924105febbfa21e22024-02-04T17:56:11ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582005-03-0124324525110.30684/etj.24.3A.5181715On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon PhotodetectorRaid Ismail0Khalid Al - Ta'ai1Manaf Ismail2Dep. of Applied science University of Technology-IRAQ.Dep. of Applied science University of Technology Baghdad-IRAQ.Dep. of Applied science University of Technology Baghdad-IRAQ.Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , Bi , Ag , and Al were deposited on the sensitive area of the detectors ( donor side ) . On the base of the transmission and absorption phenomena of the deposited films , peak response data of these detectors that conventionally at near IR ( 850-900 nm ) before deposition was reduced and resulted in peak response at 600 ± 25 nm after deposition .https://etj.uotechnology.edu.iq/article_181715_d0f1adaa145d3d3cd6e64ee83c31864c.pdfkeywords : metals / p - nsithermal evaporationoptoelectronic properties |
| spellingShingle | Raid Ismail Khalid Al - Ta'ai Manaf Ismail On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector Engineering and Technology Journal keywords : metals / p - nsi thermal evaporation optoelectronic properties |
| title | On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector |
| title_full | On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector |
| title_fullStr | On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector |
| title_full_unstemmed | On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector |
| title_short | On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector |
| title_sort | on the influence of metal deposition on responsivity peak of cleaned silicon photodetector |
| topic | keywords : metals / p - nsi thermal evaporation optoelectronic properties |
| url | https://etj.uotechnology.edu.iq/article_181715_d0f1adaa145d3d3cd6e64ee83c31864c.pdf |
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