On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector
Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , B...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2005-03-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_181715_d0f1adaa145d3d3cd6e64ee83c31864c.pdf |