Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs
For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed us...
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| Format: | Article |
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MDPI AG
2020-12-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/1/45 |
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| author | Anna Reszka Krzysztof P. Korona Stanislav Tiagulskyi Henryk Turski Uwe Jahn Slawomir Kret Rafał Bożek Marta Sobanska Zbigniew R. Zytkiewicz Bogdan J. Kowalski |
| author_facet | Anna Reszka Krzysztof P. Korona Stanislav Tiagulskyi Henryk Turski Uwe Jahn Slawomir Kret Rafał Bożek Marta Sobanska Zbigniew R. Zytkiewicz Bogdan J. Kowalski |
| author_sort | Anna Reszka |
| collection | DOAJ |
| description | For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures. |
| first_indexed | 2024-03-10T13:40:35Z |
| format | Article |
| id | doaj.art-5639556dab0045b9ba73f0645b4394ef |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T13:40:35Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-5639556dab0045b9ba73f0645b4394ef2023-11-21T03:01:52ZengMDPI AGElectronics2079-92922020-12-011014510.3390/electronics10010045Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDsAnna Reszka0Krzysztof P. Korona1Stanislav Tiagulskyi2Henryk Turski3Uwe Jahn4Slawomir Kret5Rafał Bożek6Marta Sobanska7Zbigniew R. Zytkiewicz8Bogdan J. Kowalski9Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandFaculty of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, PolandInstitute of Photonics and Electronics, Czech Academy of Sciences, Chaberská 57, 18251 Praha 8-Kobylisy, Czech RepublicInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, PL-01142 Warsaw, PolandPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, GermanyInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandFaculty of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, PolandInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandFor the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures.https://www.mdpi.com/2079-9292/10/1/45nanowiresGaNAlGaNLEDsgrowth polarity |
| spellingShingle | Anna Reszka Krzysztof P. Korona Stanislav Tiagulskyi Henryk Turski Uwe Jahn Slawomir Kret Rafał Bożek Marta Sobanska Zbigniew R. Zytkiewicz Bogdan J. Kowalski Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs Electronics nanowires GaN AlGaN LEDs growth polarity |
| title | Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs |
| title_full | Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs |
| title_fullStr | Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs |
| title_full_unstemmed | Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs |
| title_short | Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs |
| title_sort | influence of growth polarity switching on the optical and electrical properties of gan algan nanowire leds |
| topic | nanowires GaN AlGaN LEDs growth polarity |
| url | https://www.mdpi.com/2079-9292/10/1/45 |
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