Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 × 7 Surface

<p>Abstract</p> <p>The adsorption of a single Ag atom on both clear Si(111)-7 &#215; 7 and 19 hydrogen terminated Si(111)-7 &#215; 7 (hereafter referred as 19H-Si(111)-7 &#215; 7) surfaces has been investigated using first-principles calculations. The results indicated...

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Bibliographic Details
Main Authors: Lin Xiu-Zhu, Li Jing, Wu Qi-Hui
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://dx.doi.org/10.1007/s11671-009-9456-x
Description
Summary:<p>Abstract</p> <p>The adsorption of a single Ag atom on both clear Si(111)-7 &#215; 7 and 19 hydrogen terminated Si(111)-7 &#215; 7 (hereafter referred as 19H-Si(111)-7 &#215; 7) surfaces has been investigated using first-principles calculations. The results indicated that the pre-adsorbed H on Si surface altered the surface electronic properties of Si and influenced the adsorption properties of Ag atom on the H terminated Si surface (e.g., adsorption site and bonding properties). Difference charge density data indicated that covalent bond is formed between adsorbed Ag and H atoms on 19H-Si(111)-7 &#215; 7 surface, which increases the adsorption energy of Ag atom on Si surface.</p>
ISSN:1931-7573
1556-276X