Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors
Energy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are conflicting. In this paper, we perform static reliability analysis of 6...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-08-01
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| Series: | Journal of Low Power Electronics and Applications |
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| Online Access: | http://www.mdpi.com/2079-9268/8/3/28 |
| _version_ | 1798035107587555328 |
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| author | Yunfei Gu Dengxue Yan Vaibhav Verma Pai Wang Mircea R. Stan Xuan Zhang |
| author_facet | Yunfei Gu Dengxue Yan Vaibhav Verma Pai Wang Mircea R. Stan Xuan Zhang |
| author_sort | Yunfei Gu |
| collection | DOAJ |
| description | Energy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are conflicting. In this paper, we perform static reliability analysis of 6T SRAM and discover the variance among different sizing configuration and asymmetric minimum voltage requirements between read and write operations. We leverage this asymmetric property i n near-threshold processors equipped with voltage boosting capability by proposing an opportunistic dual-supply switching scheme with a write aggregation buffer. Our results show that proposed technique improves energy efficiency by more than 21.45% with approximate 10.19% performance speed-up. |
| first_indexed | 2024-04-11T20:53:39Z |
| format | Article |
| id | doaj.art-5672a1fb037242de86b12b0bdde06280 |
| institution | Directory Open Access Journal |
| issn | 2079-9268 |
| language | English |
| last_indexed | 2024-04-11T20:53:39Z |
| publishDate | 2018-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Journal of Low Power Electronics and Applications |
| spelling | doaj.art-5672a1fb037242de86b12b0bdde062802022-12-22T04:03:45ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682018-08-01832810.3390/jlpea8030028jlpea8030028Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold ProcessorsYunfei Gu0Dengxue Yan1Vaibhav Verma2Pai Wang3Mircea R. Stan4Xuan Zhang5Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USAThe Preson M. Green Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USACharles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USACharles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USACharles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USAThe Preson M. Green Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USAEnergy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are conflicting. In this paper, we perform static reliability analysis of 6T SRAM and discover the variance among different sizing configuration and asymmetric minimum voltage requirements between read and write operations. We leverage this asymmetric property i n near-threshold processors equipped with voltage boosting capability by proposing an opportunistic dual-supply switching scheme with a write aggregation buffer. Our results show that proposed technique improves energy efficiency by more than 21.45% with approximate 10.19% performance speed-up.http://www.mdpi.com/2079-9268/8/3/28Near Threshold Computing (NTC)dual-supplyStatic Random Access Memory (SRAM)reliabilitywrite aggregation buffer |
| spellingShingle | Yunfei Gu Dengxue Yan Vaibhav Verma Pai Wang Mircea R. Stan Xuan Zhang Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors Journal of Low Power Electronics and Applications Near Threshold Computing (NTC) dual-supply Static Random Access Memory (SRAM) reliability write aggregation buffer |
| title | Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors |
| title_full | Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors |
| title_fullStr | Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors |
| title_full_unstemmed | Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors |
| title_short | Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors |
| title_sort | exploiting read write asymmetry to achieve opportunistic sram voltage switching in dual supply near threshold processors |
| topic | Near Threshold Computing (NTC) dual-supply Static Random Access Memory (SRAM) reliability write aggregation buffer |
| url | http://www.mdpi.com/2079-9268/8/3/28 |
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