Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates
Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it...
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2024-02-01
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| Series: | Beilstein Journal of Nanotechnology |
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| Online Access: | https://doi.org/10.3762/bjnano.15.18 |
| _version_ | 1827329491453607936 |
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| author | Aleksandra Szkudlarek Jan M. Michalik Inés Serrano-Esparza Zdeněk Nováček Veronika Novotná Piotr Ozga Czesław Kapusta José María De Teresa |
| author_facet | Aleksandra Szkudlarek Jan M. Michalik Inés Serrano-Esparza Zdeněk Nováček Veronika Novotná Piotr Ozga Czesław Kapusta José María De Teresa |
| author_sort | Aleksandra Szkudlarek |
| collection | DOAJ |
| description | Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in water-assisted processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (<8 nC/μm2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose. |
| first_indexed | 2024-03-07T15:41:34Z |
| format | Article |
| id | doaj.art-56b827a153a1442a98e11cb8e9c20c62 |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-03-07T15:41:34Z |
| publishDate | 2024-02-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-56b827a153a1442a98e11cb8e9c20c622024-03-05T08:45:38ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862024-02-0115119019810.3762/bjnano.15.182190-4286-15-18Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substratesAleksandra Szkudlarek0Jan M. Michalik1Inés Serrano-Esparza2Zdeněk Nováček3Veronika Novotná4Piotr Ozga5Czesław Kapusta6José María De Teresa7Academic Centre for Materials and Nanotechnology, AGH University of Krakow, av. A. Mickiewicza 30, 30-059 Krakow, Poland Department of Solid State Physics, Faculty of Physics and Applied Computer Science, AGH University of Krakow, av. A. Mickiewicza 30, 30-059 Krakow, Poland Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain NenoVision s.r.o. Purkyňova 649/127, 612 00 Brno, Czech RepublicNenoVision s.r.o. Purkyňova 649/127, 612 00 Brno, Czech RepublicInstitute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Street, 30-059 Krakow, Poland Department of Solid State Physics, Faculty of Physics and Applied Computer Science, AGH University of Krakow, av. A. Mickiewicza 30, 30-059 Krakow, Poland Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in water-assisted processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (<8 nC/μm2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose.https://doi.org/10.3762/bjnano.15.18direct writingdwell timeelectron doseetchinggraphenemaskless lithographynanopatterning |
| spellingShingle | Aleksandra Szkudlarek Jan M. Michalik Inés Serrano-Esparza Zdeněk Nováček Veronika Novotná Piotr Ozga Czesław Kapusta José María De Teresa Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates Beilstein Journal of Nanotechnology direct writing dwell time electron dose etching graphene maskless lithography nanopatterning |
| title | Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates |
| title_full | Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates |
| title_fullStr | Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates |
| title_full_unstemmed | Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates |
| title_short | Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates |
| title_sort | graphene removal by water assisted focused electron beam induced etching unveiling the dose and dwell time impact on the etch profile and topographical changes in sio2 substrates |
| topic | direct writing dwell time electron dose etching graphene maskless lithography nanopatterning |
| url | https://doi.org/10.3762/bjnano.15.18 |
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