A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator

Abstract The authors present a novel wideband two‐dimensional voltage‐controlled attenuator (VCA). The proposed design employs both stacked‐FET configuration and distributed structure to achieve wideband performance, high power, and high dynamic range simultaneously. A systematic design methodology...

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Main Authors: Duy P. Nguyen, Xuan‐Tu Tran, Anh‐Vu Pham
Format: Article
Language:English
Published: Wiley 2021-04-01
Series:IET Microwaves, Antennas & Propagation
Online Access:https://doi.org/10.1049/mia2.12056
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author Duy P. Nguyen
Xuan‐Tu Tran
Anh‐Vu Pham
author_facet Duy P. Nguyen
Xuan‐Tu Tran
Anh‐Vu Pham
author_sort Duy P. Nguyen
collection DOAJ
description Abstract The authors present a novel wideband two‐dimensional voltage‐controlled attenuator (VCA). The proposed design employs both stacked‐FET configuration and distributed structure to achieve wideband performance, high power, and high dynamic range simultaneously. A systematic design methodology is also illustrated along with a fabricated prototype to verify the concept. The chip fabricated in a 0.15‐μm Gallium Arsenide (GaAs) process exhibiting a measured power at 1‐dB compression (P1dB) of 25.5 dBm with a corresponding dynamic range of 32 dB. The insertion loss ranges from 2 to 5 dB over the bandwidth from 2 to 40 GHz. Furthermore, the chip is not only very compact (0.84 mm2), but it also requires only a single positive supply voltage, which makes it more appealing to highly integrated wireless applications.
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spelling doaj.art-56f6d120fe0f4e1d9e965b4ee867c7e12022-12-22T04:21:55ZengWileyIET Microwaves, Antennas & Propagation1751-87251751-87332021-04-0115547448010.1049/mia2.12056A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuatorDuy P. Nguyen0Xuan‐Tu Tran1Anh‐Vu Pham2Department of Electrical and Computer Engineering University of California Davis CA95616 USASISLAB VNU University of Engineering and Technology Hanoi VietnamDepartment of Electrical and Computer Engineering University of California Davis CA95616 USAAbstract The authors present a novel wideband two‐dimensional voltage‐controlled attenuator (VCA). The proposed design employs both stacked‐FET configuration and distributed structure to achieve wideband performance, high power, and high dynamic range simultaneously. A systematic design methodology is also illustrated along with a fabricated prototype to verify the concept. The chip fabricated in a 0.15‐μm Gallium Arsenide (GaAs) process exhibiting a measured power at 1‐dB compression (P1dB) of 25.5 dBm with a corresponding dynamic range of 32 dB. The insertion loss ranges from 2 to 5 dB over the bandwidth from 2 to 40 GHz. Furthermore, the chip is not only very compact (0.84 mm2), but it also requires only a single positive supply voltage, which makes it more appealing to highly integrated wireless applications.https://doi.org/10.1049/mia2.12056
spellingShingle Duy P. Nguyen
Xuan‐Tu Tran
Anh‐Vu Pham
A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
IET Microwaves, Antennas & Propagation
title A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
title_full A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
title_fullStr A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
title_full_unstemmed A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
title_short A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
title_sort wideband high dynamic range triple stacked fet dual shunt distributed analogue voltage controlled attenuator
url https://doi.org/10.1049/mia2.12056
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