A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
Abstract The authors present a novel wideband two‐dimensional voltage‐controlled attenuator (VCA). The proposed design employs both stacked‐FET configuration and distributed structure to achieve wideband performance, high power, and high dynamic range simultaneously. A systematic design methodology...
Main Authors: | Duy P. Nguyen, Xuan‐Tu Tran, Anh‐Vu Pham |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2021-04-01
|
Series: | IET Microwaves, Antennas & Propagation |
Online Access: | https://doi.org/10.1049/mia2.12056 |
Similar Items
-
Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks
by: Wen-Teng Chang, et al.
Published: (2021-01-01) -
FET voltage controller /
by: 285785 Mohd. Sharil Miskan
Published: (2000) -
Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions
by: J.D. Akrofi, et al.
Published: (2020-11-01) -
Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions
by: J.D. Akrofi, et al.
Published: (2020-08-01) -
Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout
by: Eisuke Anju, et al.
Published: (2018-01-01)