Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties
In-Ga-Zn-O (IGZO) films deposited by sputtering process generally require thermal annealing above 300°C to achieve satisfactory semiconductor properties. In this work, microwave and e-beam radiation are adopted at room temperature as alternative activation methods. Thin film transistors (TFTs) based...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5082862 |