Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were d...
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| Format: | Article |
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MDPI AG
2021-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/22/6870 |
| _version_ | 1797509569486782464 |
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| author | Dong-Chan Kang Jeong-Nyeon Kim Ik-Keun Park |
| author_facet | Dong-Chan Kang Jeong-Nyeon Kim Ik-Keun Park |
| author_sort | Dong-Chan Kang |
| collection | DOAJ |
| description | In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the −6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm. |
| first_indexed | 2024-03-10T05:19:41Z |
| format | Article |
| id | doaj.art-570c69667d414eb28aca04165f8dd1d6 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T05:19:41Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-570c69667d414eb28aca04165f8dd1d62023-11-23T00:10:04ZengMDPI AGMaterials1996-19442021-11-011422687010.3390/ma14226870Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering MethodDong-Chan Kang0Jeong-Nyeon Kim1Ik-Keun Park2Graduate School of Nano IT Design Fusion, Seoul National University of Science and Technology, 232, Gongneung-ro, Nowon-gu, Seoul 01811, KoreaGinzton Laboratory, Stanford University, Stanford, CA 94305, USADepartment of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, 232, Gongneung-ro, Nowon-gu, Seoul 01811, KoreaIn the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the −6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm.https://www.mdpi.com/1996-1944/14/22/6870high-resolution scanning acoustic microscope (HR-SAM)zinc oxide filmpiezoelectric ceramicsacoustic sensor |
| spellingShingle | Dong-Chan Kang Jeong-Nyeon Kim Ik-Keun Park Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method Materials high-resolution scanning acoustic microscope (HR-SAM) zinc oxide film piezoelectric ceramics acoustic sensor |
| title | Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
| title_full | Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
| title_fullStr | Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
| title_full_unstemmed | Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
| title_short | Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
| title_sort | development of a high resolution acoustic sensor based on zno film deposited by the rf magnetron sputtering method |
| topic | high-resolution scanning acoustic microscope (HR-SAM) zinc oxide film piezoelectric ceramics acoustic sensor |
| url | https://www.mdpi.com/1996-1944/14/22/6870 |
| work_keys_str_mv | AT dongchankang developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod AT jeongnyeonkim developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod AT ikkeunpark developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod |