Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2019-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-2933-y |
| Summary: | Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. |
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| ISSN: | 1931-7573 1556-276X |