Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-2933-y |
| _version_ | 1797725399641227264 |
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| author | Tian-Yu Wang Jia-Lin Meng Zhen-Yu He Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang |
| author_facet | Tian-Yu Wang Jia-Lin Meng Zhen-Yu He Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang |
| author_sort | Tian-Yu Wang |
| collection | DOAJ |
| description | Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. |
| first_indexed | 2024-03-12T10:30:39Z |
| format | Article |
| id | doaj.art-5715238dd34b40e189e23459076c93c7 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T10:30:39Z |
| publishDate | 2019-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-5715238dd34b40e189e23459076c93c72023-09-02T09:12:26ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-03-011411610.1186/s11671-019-2933-yAtomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic PlasticityTian-Yu Wang0Jia-Lin Meng1Zhen-Yu He2Lin Chen3Hao Zhu4Qing-Qing Sun5Shi-Jin Ding6David Wei Zhang7State Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityFrontier Science Center for Synthetic Biology and Key Laboratory of Systems Bioengineering (MOE), and School of Chemical Engineering and Technology, Tianjin UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityAbstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.http://link.springer.com/article/10.1186/s11671-019-2933-yAtomic layer depositionLow-temperature processFlexible electronicsSynaptic plasticity |
| spellingShingle | Tian-Yu Wang Jia-Lin Meng Zhen-Yu He Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity Nanoscale Research Letters Atomic layer deposition Low-temperature process Flexible electronics Synaptic plasticity |
| title | Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity |
| title_full | Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity |
| title_fullStr | Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity |
| title_full_unstemmed | Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity |
| title_short | Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity |
| title_sort | atomic layer deposited hf0 5zr0 5o2 based flexible memristor with short long term synaptic plasticity |
| topic | Atomic layer deposition Low-temperature process Flexible electronics Synaptic plasticity |
| url | http://link.springer.com/article/10.1186/s11671-019-2933-y |
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