Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching...

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Bibliographic Details
Main Authors: Tian-Yu Wang, Jia-Lin Meng, Zhen-Yu He, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-03-01
Series:Nanoscale Research Letters
Subjects:
Atomic layer deposition
Low-temperature process
Flexible electronics
Synaptic plasticity
Online Access:http://link.springer.com/article/10.1186/s11671-019-2933-y

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