Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction
We investigate the switching dynamics of a 75°-canted Spin–orbit torque (SOT) device with an in-plane easy axis using the micro-magnetic simulation. The switching time (τ) is evaluated from the time evolution of the magnetization. The device with a strong out-of-plane magnetic anisotropy (μ0Hkeff =...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/9.0000789 |
| _version_ | 1797278278065586176 |
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| author | T. V. A. Nguyen H. Naganuma H. Honjo S. Ikeda T. Endoh |
| author_facet | T. V. A. Nguyen H. Naganuma H. Honjo S. Ikeda T. Endoh |
| author_sort | T. V. A. Nguyen |
| collection | DOAJ |
| description | We investigate the switching dynamics of a 75°-canted Spin–orbit torque (SOT) device with an in-plane easy axis using the micro-magnetic simulation. The switching time (τ) is evaluated from the time evolution of the magnetization. The device with a strong out-of-plane magnetic anisotropy (μ0Hkeff = −0.08 T) shows τ = 0.19 ns while a device with a strong in-plane magnetic anisotropy (μ0Hkeff = −0.9 T) shows τ = 0.32 ns. The increase of the damping constant (α) results in the increase of τ for both devices and the sub-nanosecond switching could be retained as α < 0.14 in the device with μ0Hkeff = −0.08 T, while this was achieved as α < 0.04 in the device with μ0Hkeff = −0.9 T. Furthermore when the field-like coefficient (β) is increased, it leads to a decrease in τ, which can be reduced to 0.03 ns by increasing β to 1 in the device with μ0Hkeff = −0.08 T. In order to achieve the same result in the device with μ0Hkeff = −0.9 T, β must be increased to 6. These results indicate a way to achieve ultrafast field-free SOT switching of a few tens of picoseconds in nanometer-sized magnetic tunnel junction (MTJ) devices. |
| first_indexed | 2024-03-07T16:00:59Z |
| format | Article |
| id | doaj.art-5738427e6c004dd78b39f77ddd5229b8 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-07T16:00:59Z |
| publishDate | 2024-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-5738427e6c004dd78b39f77ddd5229b82024-03-04T21:29:32ZengAIP Publishing LLCAIP Advances2158-32262024-02-01142025018025018-510.1063/9.0000789Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junctionT. V. A. Nguyen0H. Naganuma1H. Honjo2S. Ikeda3T. Endoh4Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Sendai, JapanCenter for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Sendai, JapanCenter for Innovative Integrated Electronic Systems, Tohoku University, Sendai, JapanCenter for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Sendai, JapanCenter for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Sendai, JapanWe investigate the switching dynamics of a 75°-canted Spin–orbit torque (SOT) device with an in-plane easy axis using the micro-magnetic simulation. The switching time (τ) is evaluated from the time evolution of the magnetization. The device with a strong out-of-plane magnetic anisotropy (μ0Hkeff = −0.08 T) shows τ = 0.19 ns while a device with a strong in-plane magnetic anisotropy (μ0Hkeff = −0.9 T) shows τ = 0.32 ns. The increase of the damping constant (α) results in the increase of τ for both devices and the sub-nanosecond switching could be retained as α < 0.14 in the device with μ0Hkeff = −0.08 T, while this was achieved as α < 0.04 in the device with μ0Hkeff = −0.9 T. Furthermore when the field-like coefficient (β) is increased, it leads to a decrease in τ, which can be reduced to 0.03 ns by increasing β to 1 in the device with μ0Hkeff = −0.08 T. In order to achieve the same result in the device with μ0Hkeff = −0.9 T, β must be increased to 6. These results indicate a way to achieve ultrafast field-free SOT switching of a few tens of picoseconds in nanometer-sized magnetic tunnel junction (MTJ) devices.http://dx.doi.org/10.1063/9.0000789 |
| spellingShingle | T. V. A. Nguyen H. Naganuma H. Honjo S. Ikeda T. Endoh Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction AIP Advances |
| title | Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction |
| title_full | Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction |
| title_fullStr | Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction |
| title_full_unstemmed | Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction |
| title_short | Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction |
| title_sort | ultrafast spin orbit torque induced magnetization switching in a 75° canted magnetic tunnel junction |
| url | http://dx.doi.org/10.1063/9.0000789 |
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