Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 10<sup>9</sup> photons per second under electrical excitation. However, the...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/12/3177 |
| _version_ | 1797502046069325824 |
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| author | Igor A. Khramtsov Dmitry Yu. Fedyanin |
| author_facet | Igor A. Khramtsov Dmitry Yu. Fedyanin |
| author_sort | Igor A. Khramtsov |
| collection | DOAJ |
| description | Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 10<sup>9</sup> photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 10<sup>7</sup> photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide. |
| first_indexed | 2024-03-10T03:27:15Z |
| format | Article |
| id | doaj.art-574f1233b0154bfd8e1e485bb6d77095 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:27:15Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-574f1233b0154bfd8e1e485bb6d770952023-11-23T09:48:54ZengMDPI AGNanomaterials2079-49912021-11-011112317710.3390/nano11123177Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics ApplicationsIgor A. Khramtsov0Dmitry Yu. Fedyanin1Laboratory of Nanooptics and Plasmonics, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, RussiaLaboratory of Nanooptics and Plasmonics, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, RussiaColor centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 10<sup>9</sup> photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 10<sup>7</sup> photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.https://www.mdpi.com/2079-4991/11/12/3177color centerssilicon carbidesingle-photon sourcesingle-photon emitting diodesingle-photon electroluminescencesuperinjection in homojunctions |
| spellingShingle | Igor A. Khramtsov Dmitry Yu. Fedyanin Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications Nanomaterials color centers silicon carbide single-photon source single-photon emitting diode single-photon electroluminescence superinjection in homojunctions |
| title | Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications |
| title_full | Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications |
| title_fullStr | Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications |
| title_full_unstemmed | Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications |
| title_short | Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications |
| title_sort | bright silicon carbide single photon emitting diodes at low temperatures toward quantum photonics applications |
| topic | color centers silicon carbide single-photon source single-photon emitting diode single-photon electroluminescence superinjection in homojunctions |
| url | https://www.mdpi.com/2079-4991/11/12/3177 |
| work_keys_str_mv | AT igorakhramtsov brightsiliconcarbidesinglephotonemittingdiodesatlowtemperaturestowardquantumphotonicsapplications AT dmitryyufedyanin brightsiliconcarbidesinglephotonemittingdiodesatlowtemperaturestowardquantumphotonicsapplications |