Enhanced thermoelectric power factor of p-type Mg3Sb2 via co-doping of Si and Fe
Mg3Sb2-based Zintl compounds are well known as an intrinsic p-type narrow bandgap semiconductor which can be considered as promising candidates because of their non-toxic and inexpensive elements. In this study, Mg3Sb2 compounds doped with Si and co-doped with Fe and Si have been successfully prepar...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
HO CHI MINH CITY OPEN UNIVERSITY JOURNAL OF SCIENCE
2022-09-01
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| Series: | Tạp chí Khoa học Đại học Mở Thành phố Hồ Chí Minh - Kỹ thuật và Công nghệ |
| Subjects: | |
| Online Access: | https://journalofscience.ou.edu.vn/index.php/tech-vi/article/view/2290 |
| Summary: | Mg3Sb2-based Zintl compounds are well known as an intrinsic p-type narrow bandgap semiconductor which can be considered as promising candidates because of their non-toxic and inexpensive elements. In this study, Mg3Sb2 compounds doped with Si and co-doped with Fe and Si have been successfully prepared by solid phase reaction method (Combination of high energy ball milling, hot pressing, and sintering). The thermoelectric properties of Si-doped and (Fe, Si) co-doped on the Sb sites of Mg3Sb2 compounds were investigated in the temperature range of 300-673K. The secondary phases of SiSb3 and FeSb were found in the doping samples. The thermoelectric results showed that the electrical conductivity strongly increased in Si-doped sample, while the additional Fe doping further enhanced the Seebeck coefficient compared to undoped Mg3Sb2 sample. The highest power factor value was observed in co-doped Fe, Si sample. Maximum value of the power factor in Mg3Sb1.4Fe0.5Si0.1 was 1.8 μWcm-1K-2 at 673K, which is around ~ 2.2 times higher than that of the undoped sample. |
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| ISSN: | 2734-9322 2734-9594 |