Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Abstract Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconducto...

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Main Authors: Jiarui Gong, Jie Zhou, Ping Wang, Tae‐Hyeon Kim, Kuangye Lu, Seunghwan Min, Ranveer Singh, Moheb Sheikhi, Haris Naeem Abbasi, Daniel Vincent, Ding Wang, Neil Campbell, Timothy Grotjohn, Mark Rzchowski, Jeehwan Kim, Edward T. Yu, Zetian Mi, Zhenqiang Ma
Format: Article
Language:English
Published: Wiley-VCH 2023-05-01
Series:Advanced Electronic Materials
Subjects:
Online Access:https://doi.org/10.1002/aelm.202201309
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author Jiarui Gong
Jie Zhou
Ping Wang
Tae‐Hyeon Kim
Kuangye Lu
Seunghwan Min
Ranveer Singh
Moheb Sheikhi
Haris Naeem Abbasi
Daniel Vincent
Ding Wang
Neil Campbell
Timothy Grotjohn
Mark Rzchowski
Jeehwan Kim
Edward T. Yu
Zetian Mi
Zhenqiang Ma
author_facet Jiarui Gong
Jie Zhou
Ping Wang
Tae‐Hyeon Kim
Kuangye Lu
Seunghwan Min
Ranveer Singh
Moheb Sheikhi
Haris Naeem Abbasi
Daniel Vincent
Ding Wang
Neil Campbell
Timothy Grotjohn
Mark Rzchowski
Jeehwan Kim
Edward T. Yu
Zetian Mi
Zhenqiang Ma
author_sort Jiarui Gong
collection DOAJ
description Abstract Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes. Single‐crystalline aluminum nitride (AlN), as an ultrawide‐bandgap semiconductor with great potential in applications such as high‐power electronics has not been demonstrated in its NM forms. This very first report demonstrates the creation, transfer‐printing, and characteristics of the high‐quality single‐crystalline AlN NMs. This work successfully transfers the AlN NMs onto various foreign substrates. The crystalline quality of the NMs has been characterized by a broad range of techniques before and after the transfer‐printing and no degradation in crystal quality has been observed. Interestingly, a partial relaxation of the tensile stress has been observed when comparing the original as‐grown AlN epi and the transferred AlN NMs. In addition, the transferred AlN NMs exhibits the presence of piezoelectricity at the nanoscale, as confirmed by piezoelectric force microscopy. This work also comments on the advantages and the challenges of the approach. Potentially, the novel approach opens a viable path for the development of the AlN‐based heterogeneous integration and future novel electronics and optoelectronics.
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spelling doaj.art-57794e0abe3d4502bfad6fb48b142f612023-09-28T04:47:10ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-05-0195n/an/a10.1002/aelm.202201309Synthesis and Characteristics of Transferrable Single‐Crystalline AlN NanomembranesJiarui Gong0Jie Zhou1Ping Wang2Tae‐Hyeon Kim3Kuangye Lu4Seunghwan Min5Ranveer Singh6Moheb Sheikhi7Haris Naeem Abbasi8Daniel Vincent9Ding Wang10Neil Campbell11Timothy Grotjohn12Mark Rzchowski13Jeehwan Kim14Edward T. Yu15Zetian Mi16Zhenqiang Ma17Department of Physics University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109 USAMicroelectronics Research Center Department of Electrical Engineering and Computer Science University of Texas at Austin Austin TX 78758 USADepartment of Mechanical Engineering Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109 USADepartment of Physics University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering Michigan State University East Lansing MI 48824 USADepartment of Physics University of Wisconsin‐Madison Madison WI 53706 USADepartment of Mechanical Engineering Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USAMicroelectronics Research Center Department of Electrical Engineering and Computer Science University of Texas at Austin Austin TX 78758 USADepartment of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USAAbstract Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes. Single‐crystalline aluminum nitride (AlN), as an ultrawide‐bandgap semiconductor with great potential in applications such as high‐power electronics has not been demonstrated in its NM forms. This very first report demonstrates the creation, transfer‐printing, and characteristics of the high‐quality single‐crystalline AlN NMs. This work successfully transfers the AlN NMs onto various foreign substrates. The crystalline quality of the NMs has been characterized by a broad range of techniques before and after the transfer‐printing and no degradation in crystal quality has been observed. Interestingly, a partial relaxation of the tensile stress has been observed when comparing the original as‐grown AlN epi and the transferred AlN NMs. In addition, the transferred AlN NMs exhibits the presence of piezoelectricity at the nanoscale, as confirmed by piezoelectric force microscopy. This work also comments on the advantages and the challenges of the approach. Potentially, the novel approach opens a viable path for the development of the AlN‐based heterogeneous integration and future novel electronics and optoelectronics.https://doi.org/10.1002/aelm.202201309aluminum nitride (AlN)piezoresponse force microscopyscanning transmission electron microscopysingle‐crystalline nanomembranestransfer‐printingultra‐wide bandgap (UWBG)
spellingShingle Jiarui Gong
Jie Zhou
Ping Wang
Tae‐Hyeon Kim
Kuangye Lu
Seunghwan Min
Ranveer Singh
Moheb Sheikhi
Haris Naeem Abbasi
Daniel Vincent
Ding Wang
Neil Campbell
Timothy Grotjohn
Mark Rzchowski
Jeehwan Kim
Edward T. Yu
Zetian Mi
Zhenqiang Ma
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
Advanced Electronic Materials
aluminum nitride (AlN)
piezoresponse force microscopy
scanning transmission electron microscopy
single‐crystalline nanomembranes
transfer‐printing
ultra‐wide bandgap (UWBG)
title Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
title_full Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
title_fullStr Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
title_full_unstemmed Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
title_short Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
title_sort synthesis and characteristics of transferrable single crystalline aln nanomembranes
topic aluminum nitride (AlN)
piezoresponse force microscopy
scanning transmission electron microscopy
single‐crystalline nanomembranes
transfer‐printing
ultra‐wide bandgap (UWBG)
url https://doi.org/10.1002/aelm.202201309
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