Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules
In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/2/477 |
| _version_ | 1797619230972051456 |
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| author | Alexey Tkachenko Igor Lysenko Andrey Kovalev |
| author_facet | Alexey Tkachenko Igor Lysenko Andrey Kovalev |
| author_sort | Alexey Tkachenko |
| collection | DOAJ |
| description | In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than −0.69 dB and the reflection loss is −28.35 dB, and in the closed state the isolation value is at least −54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than −0.67 dB and the reflection loss is −20.7 dB, and in the closed state the isolation value is not less than −52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state. |
| first_indexed | 2024-03-11T08:24:12Z |
| format | Article |
| id | doaj.art-579d14f5ffb64d188516f9dd09aa6b85 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T08:24:12Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-579d14f5ffb64d188516f9dd09aa6b852023-11-16T22:12:47ZengMDPI AGMicromachines2072-666X2023-02-0114247710.3390/mi14020477Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End ModulesAlexey Tkachenko0Igor Lysenko1Andrey Kovalev2Design Center of the Microelectronic Component Base for Artificial Intelligence Systems, Southern Federal University, Taganrog 347922, RussiaDesign Center of the Microelectronic Component Base for Artificial Intelligence Systems, Southern Federal University, Taganrog 347922, RussiaDesign Center of the Microelectronic Component Base for Artificial Intelligence Systems, Southern Federal University, Taganrog 347922, RussiaIn this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than −0.69 dB and the reflection loss is −28.35 dB, and in the closed state the isolation value is at least −54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than −0.67 dB and the reflection loss is −20.7 dB, and in the closed state the isolation value is not less than −52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state.https://www.mdpi.com/2072-666X/14/2/477microelectromechanical systemsMEMSradio-frequencyRFRF MEMSswitch |
| spellingShingle | Alexey Tkachenko Igor Lysenko Andrey Kovalev Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules Micromachines microelectromechanical systems MEMS radio-frequency RF RF MEMS switch |
| title | Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules |
| title_full | Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules |
| title_fullStr | Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules |
| title_full_unstemmed | Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules |
| title_short | Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules |
| title_sort | investigation and research of high performance rf mems switches for use in the 5g rf front end modules |
| topic | microelectromechanical systems MEMS radio-frequency RF RF MEMS switch |
| url | https://www.mdpi.com/2072-666X/14/2/477 |
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