Effect of stacking type and magnetic moment in spin-valley polarized MoS2–MoSe2 heterobilayers
In this work, we focused on engineering the bandgap of the MoS2–MoSe2 heterobilayer via either stacking type or induced magnetic moment with the aid of density functional theory. We have computed the electronic properties of different stacking MoS2–MoSe2 heterobilayers and their magnetization compon...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0105206 |