Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band sol...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2020-08-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-020-00054-6 |
| _version_ | 1818692363561730048 |
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| author | Ross Cheriton Sharif M. Sadaf Luc Robichaud Jacob J. Krich Zetian Mi Karin Hinzer |
| author_facet | Ross Cheriton Sharif M. Sadaf Luc Robichaud Jacob J. Krich Zetian Mi Karin Hinzer |
| author_sort | Ross Cheriton |
| collection | DOAJ |
| description | Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band solar cell. |
| first_indexed | 2024-12-17T12:56:36Z |
| format | Article |
| id | doaj.art-57cee3b6adc849a1a18136b880823397 |
| institution | Directory Open Access Journal |
| issn | 2662-4443 |
| language | English |
| last_indexed | 2024-12-17T12:56:36Z |
| publishDate | 2020-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Materials |
| spelling | doaj.art-57cee3b6adc849a1a18136b8808233972022-12-21T21:47:28ZengNature PortfolioCommunications Materials2662-44432020-08-01111710.1038/s43246-020-00054-6Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cellsRoss Cheriton0Sharif M. Sadaf1Luc Robichaud2Jacob J. Krich3Zetian Mi4Karin Hinzer5Advanced Electronics and Photonics, National Research Council of CanadaAdvanced Electronics and Photonics, National Research Council of CanadaCentre for Research in Photonics, University of OttawaCentre for Research in Photonics, University of OttawaDepartment of Electrical and Computer Engineering, McGill UniversityCentre for Research in Photonics, University of OttawaIntermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band solar cell.https://doi.org/10.1038/s43246-020-00054-6 |
| spellingShingle | Ross Cheriton Sharif M. Sadaf Luc Robichaud Jacob J. Krich Zetian Mi Karin Hinzer Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells Communications Materials |
| title | Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells |
| title_full | Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells |
| title_fullStr | Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells |
| title_full_unstemmed | Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells |
| title_short | Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells |
| title_sort | two photon photocurrent in ingan gan nanowire intermediate band solar cells |
| url | https://doi.org/10.1038/s43246-020-00054-6 |
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