Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage
Reduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohe...
| Main Authors: | , , , , |
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| Format: | Article |
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MDPI AG
2023-08-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/28/17/6271 |
| _version_ | 1797582116281647104 |
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| author | Kai Gao Wei Li Xiaoyang Wang Sai Sun Bin Zhang |
| author_facet | Kai Gao Wei Li Xiaoyang Wang Sai Sun Bin Zhang |
| author_sort | Kai Gao |
| collection | DOAJ |
| description | Reduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohexyl)-9H-fluorene)-alt-(9-(4-(1,2,2-triphenylvinyl)phenyl)-9H-carbazole)] (PAFTC) was covalently grafted onto RGO to produce (PFTC-<i>g</i>-RGO). The solubility of two-dimensional graphene was improved by incorporating it into the backbone of PAFTC to form new functional materials. In resistive random access memory (RRAM) devices, PFTC-<i>g</i>-RGO was used as the active layer material after it was characterized. The fabricated Al/PFTC-<i>g</i>-RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a long retention time of over 10<sup>4</sup> s, excellent endurance of over 200 switching cycles, and an impressively low turn-ON voltage. This study provides important insights into the future development of AIE polymer-functionalized nanomaterials for information storage. |
| first_indexed | 2024-03-10T23:17:19Z |
| format | Article |
| id | doaj.art-57dfc016dc244f2abacf476a7ecdb4b1 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T23:17:19Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-57dfc016dc244f2abacf476a7ecdb4b12023-11-19T08:33:40ZengMDPI AGMolecules1420-30492023-08-012817627110.3390/molecules28176271Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information StorageKai Gao0Wei Li1Xiaoyang Wang2Sai Sun3Bin Zhang4Sinopec Shanghai Research Institute of Petrochemical Technology, Shanghai 201208, ChinaKey Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, ChinaGuangxi Key Laboratory of Information Material, Engineering Research Center of Electronic Information Materials and Devices, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, ChinaSinopec Shanghai Research Institute of Petrochemical Technology, Shanghai 201208, ChinaKey Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, ChinaReduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohexyl)-9H-fluorene)-alt-(9-(4-(1,2,2-triphenylvinyl)phenyl)-9H-carbazole)] (PAFTC) was covalently grafted onto RGO to produce (PFTC-<i>g</i>-RGO). The solubility of two-dimensional graphene was improved by incorporating it into the backbone of PAFTC to form new functional materials. In resistive random access memory (RRAM) devices, PFTC-<i>g</i>-RGO was used as the active layer material after it was characterized. The fabricated Al/PFTC-<i>g</i>-RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a long retention time of over 10<sup>4</sup> s, excellent endurance of over 200 switching cycles, and an impressively low turn-ON voltage. This study provides important insights into the future development of AIE polymer-functionalized nanomaterials for information storage.https://www.mdpi.com/1420-3049/28/17/6271aggregation-induced emissionreduced graphene oxidesurface modificationinformation storage |
| spellingShingle | Kai Gao Wei Li Xiaoyang Wang Sai Sun Bin Zhang Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage Molecules aggregation-induced emission reduced graphene oxide surface modification information storage |
| title | Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage |
| title_full | Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage |
| title_fullStr | Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage |
| title_full_unstemmed | Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage |
| title_short | Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage |
| title_sort | fabrication of aie polymer functionalized reduced graphene oxide for information storage |
| topic | aggregation-induced emission reduced graphene oxide surface modification information storage |
| url | https://www.mdpi.com/1420-3049/28/17/6271 |
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