Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide
In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (<i>C</i>–<i>V</i>) and current-v...
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2022-12-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/23/8637 |
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| author | Alexander A. Lebedev Vitali V. Kozlovski Klavdia S. Davydovskaya Roman A. Kuzmin Mikhail E. Levinshtein Anatolii M. Strel’chuk |
| author_facet | Alexander A. Lebedev Vitali V. Kozlovski Klavdia S. Davydovskaya Roman A. Kuzmin Mikhail E. Levinshtein Anatolii M. Strel’chuk |
| author_sort | Alexander A. Lebedev |
| collection | DOAJ |
| description | In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (<i>C</i>–<i>V</i>) and current-voltage (<i>I–V</i>) characteristics. The dependence of the base resistance in high-voltage 4H-SiC Schottky diodes on the dose of irradiation by electrons and protons is experimentally traced in the range of eight orders of magnitude. It is demonstrated that the dependence of the carrier concentration on the irradiation dose can be determined unambiguously and reliably in a very wide range of compensation levels, based on the results of measuring the <i>I–V</i> characteristics. It is shown that the determination of the carrier removal rate using the <i>I–V</i> characteristics is more correct than using the <i>C–V</i> characteristics, especially in the case of high radiation doses. |
| first_indexed | 2024-03-09T17:41:34Z |
| format | Article |
| id | doaj.art-57e8dd165eab4ca5858797a131c97ca9 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T17:41:34Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-57e8dd165eab4ca5858797a131c97ca92023-11-24T11:31:38ZengMDPI AGMaterials1996-19442022-12-011523863710.3390/ma15238637Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon CarbideAlexander A. Lebedev0Vitali V. Kozlovski1Klavdia S. Davydovskaya2Roman A. Kuzmin3Mikhail E. Levinshtein4Anatolii M. Strel’chuk5Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, RussiaDepartment of Experimental Physics, St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, St. Petersburg 195251, RussiaIoffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, RussiaIoffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, RussiaIoffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, RussiaIoffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, RussiaIn this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (<i>C</i>–<i>V</i>) and current-voltage (<i>I–V</i>) characteristics. The dependence of the base resistance in high-voltage 4H-SiC Schottky diodes on the dose of irradiation by electrons and protons is experimentally traced in the range of eight orders of magnitude. It is demonstrated that the dependence of the carrier concentration on the irradiation dose can be determined unambiguously and reliably in a very wide range of compensation levels, based on the results of measuring the <i>I–V</i> characteristics. It is shown that the determination of the carrier removal rate using the <i>I–V</i> characteristics is more correct than using the <i>C–V</i> characteristics, especially in the case of high radiation doses.https://www.mdpi.com/1996-1944/15/23/8637radiation compensationwide-gap semiconductorsdeep levelsprotonselectronscurrent-voltage characteristics |
| spellingShingle | Alexander A. Lebedev Vitali V. Kozlovski Klavdia S. Davydovskaya Roman A. Kuzmin Mikhail E. Levinshtein Anatolii M. Strel’chuk Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide Materials radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics |
| title | Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide |
| title_full | Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide |
| title_fullStr | Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide |
| title_full_unstemmed | Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide |
| title_short | Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide |
| title_sort | features of the carrier concentration determination during irradiation of wide gap semiconductors the case study of silicon carbide |
| topic | radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics |
| url | https://www.mdpi.com/1996-1944/15/23/8637 |
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