Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide

Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide

In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (<i>C</i>–<i>V</i>) and current-v...

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Bibliographic Details
Main Authors: Alexander A. Lebedev, Vitali V. Kozlovski, Klavdia S. Davydovskaya, Roman A. Kuzmin, Mikhail E. Levinshtein, Anatolii M. Strel’chuk
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Materials
Subjects:
radiation compensation
wide-gap semiconductors
deep levels
protons
electrons
current-voltage characteristics
Online Access:https://www.mdpi.com/1996-1944/15/23/8637

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