Field Emission of ITO-Coated Vertically Aligned Nanowire Array
<p>Abstract</p> <p>An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9613-2 |
| _version_ | 1797763414008791040 |
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| author | Lee ChangHwa Lee SeokWoo Lee Seung |
| author_facet | Lee ChangHwa Lee SeokWoo Lee Seung |
| author_sort | Lee ChangHwa |
| collection | DOAJ |
| description | <p>Abstract</p> <p>An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.</p> |
| first_indexed | 2024-03-12T19:42:14Z |
| format | Article |
| id | doaj.art-58283126e8ad4df2a9674839cd549409 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:42:14Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-58283126e8ad4df2a9674839cd5494092023-08-02T03:46:31ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-015711281131Field Emission of ITO-Coated Vertically Aligned Nanowire ArrayLee ChangHwaLee SeokWooLee Seung<p>Abstract</p> <p>An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.</p>http://dx.doi.org/10.1007/s11671-010-9613-2Field emissionITONanowireTop–down |
| spellingShingle | Lee ChangHwa Lee SeokWoo Lee Seung Field Emission of ITO-Coated Vertically Aligned Nanowire Array Nanoscale Research Letters Field emission ITO Nanowire Top–down |
| title | Field Emission of ITO-Coated Vertically Aligned Nanowire Array |
| title_full | Field Emission of ITO-Coated Vertically Aligned Nanowire Array |
| title_fullStr | Field Emission of ITO-Coated Vertically Aligned Nanowire Array |
| title_full_unstemmed | Field Emission of ITO-Coated Vertically Aligned Nanowire Array |
| title_short | Field Emission of ITO-Coated Vertically Aligned Nanowire Array |
| title_sort | field emission of ito coated vertically aligned nanowire array |
| topic | Field emission ITO Nanowire Top–down |
| url | http://dx.doi.org/10.1007/s11671-010-9613-2 |
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