Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films

Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 µm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples wer...

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Main Authors: Mota–Santiago P., Schauries D., Nadzri A., Vora K., Ridgway M. C., Kluth P.
Format: Article
Language:English
Published: EDP Sciences 2015-01-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/20159100008
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author Mota–Santiago P.
Schauries D.
Nadzri A.
Vora K.
Ridgway M. C.
Kluth P.
author_facet Mota–Santiago P.
Schauries D.
Nadzri A.
Vora K.
Ridgway M. C.
Kluth P.
author_sort Mota–Santiago P.
collection DOAJ
description Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 µm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X–ray scattering (SAXS). The radial density of the ion tracks resembles a core–shell structure with a typical radius of ~ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.
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spelling doaj.art-586bfa9d2f5d408ebf078c38ca0abbef2022-12-21T18:33:57ZengEDP SciencesEPJ Web of Conferences2100-014X2015-01-01910000810.1051/epjconf/20159100008epjconf_hias2014_00008Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride filmsMota–Santiago P.0Schauries D.1Nadzri A.2Vora K.3Ridgway M. C.4Kluth P.5Department of Electronic Materials Engineering, Australian National UniversityDepartment of Electronic Materials Engineering, Australian National UniversityDepartment of Electronic Materials Engineering, Australian National UniversityAustralian National Fabrication Facility, ACT Node, Research School of Physics and Engineering, Australian National UniversityDepartment of Electronic Materials Engineering, Australian National UniversityDepartment of Electronic Materials Engineering, Australian National UniversityAmorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 µm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X–ray scattering (SAXS). The radial density of the ion tracks resembles a core–shell structure with a typical radius of ~ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.http://dx.doi.org/10.1051/epjconf/20159100008
spellingShingle Mota–Santiago P.
Schauries D.
Nadzri A.
Vora K.
Ridgway M. C.
Kluth P.
Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
EPJ Web of Conferences
title Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
title_full Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
title_fullStr Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
title_full_unstemmed Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
title_short Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
title_sort characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
url http://dx.doi.org/10.1051/epjconf/20159100008
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