Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study
Structural, electronic, and optical properties of one-dimensional (1D) SnGeand SnC with two types (armchair and zigzag) and different widths are studied by usingfirst-principles calculations. The atoms of these structures in edges are passivated byhydrogen. The results show armchair SnGe and SnC nan...
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| Format: | Article |
| Language: | English |
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Islamic Azad University, Marvdasht Branch
2020-11-01
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| Series: | Journal of Optoelectronical Nanostructures |
| Subjects: | |
| Online Access: | https://jopn.marvdasht.iau.ir/article_4507_02a2fe9968cbee35d64c3e1b96767d11.pdf |
| _version_ | 1797740786770509824 |
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| author | samira damizadeh Maryam Nayeri Forough Kalantari Fotooh somayeh fotoohi |
| author_facet | samira damizadeh Maryam Nayeri Forough Kalantari Fotooh somayeh fotoohi |
| author_sort | samira damizadeh |
| collection | DOAJ |
| description | Structural, electronic, and optical properties of one-dimensional (1D) SnGeand SnC with two types (armchair and zigzag) and different widths are studied by usingfirst-principles calculations. The atoms of these structures in edges are passivated byhydrogen. The results show armchair SnGe and SnC nanoribbons (A-SnXNRs, X=Ge, C)are the direct semiconducting and divided into three distinct families W=3p, W=3p+1,and W=3p+2, (p is a positive integer). By increasing width, the band gaps converge to1.71 eV and 0.15 eV for A-SnCNRs and A-SnGeNRs, respectively. Furthermore, theposition of the first peak of the dielectric function in both of them occurs in their value ofdirect band gap at أ point. also, the absorption coefficient for 9, 11, 13 A-SnCNRsdisplays that there is no absorption at the lower energy range from 0 to 1.2 eV, whereasabsorption characteristics for 9, 11, and 13 A-SnGeNRs appeared at near-infrared to thevisible spectrum. These results can provide important information for the use of GroupIV binary compounds in electronic devices. |
| first_indexed | 2024-03-12T14:17:25Z |
| format | Article |
| id | doaj.art-5889f0207385443b990c07b96ebbc5b0 |
| institution | Directory Open Access Journal |
| issn | 2423-7361 2538-2489 |
| language | English |
| last_indexed | 2024-03-12T14:17:25Z |
| publishDate | 2020-11-01 |
| publisher | Islamic Azad University, Marvdasht Branch |
| record_format | Article |
| series | Journal of Optoelectronical Nanostructures |
| spelling | doaj.art-5889f0207385443b990c07b96ebbc5b02023-08-20T05:08:21ZengIslamic Azad University, Marvdasht BranchJournal of Optoelectronical Nanostructures2423-73612538-24892020-11-015467864507Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Studysamira damizadeh0Maryam Nayeri1Forough Kalantari Fotooh2somayeh fotoohi3Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran.Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, IranDepartment of Chemistry, Yazd Branch, Islamic Azad University, Yazd, IranDepartment of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Islamshahr, IranStructural, electronic, and optical properties of one-dimensional (1D) SnGeand SnC with two types (armchair and zigzag) and different widths are studied by usingfirst-principles calculations. The atoms of these structures in edges are passivated byhydrogen. The results show armchair SnGe and SnC nanoribbons (A-SnXNRs, X=Ge, C)are the direct semiconducting and divided into three distinct families W=3p, W=3p+1,and W=3p+2, (p is a positive integer). By increasing width, the band gaps converge to1.71 eV and 0.15 eV for A-SnCNRs and A-SnGeNRs, respectively. Furthermore, theposition of the first peak of the dielectric function in both of them occurs in their value ofdirect band gap at أ point. also, the absorption coefficient for 9, 11, 13 A-SnCNRsdisplays that there is no absorption at the lower energy range from 0 to 1.2 eV, whereasabsorption characteristics for 9, 11, and 13 A-SnGeNRs appeared at near-infrared to thevisible spectrum. These results can provide important information for the use of GroupIV binary compounds in electronic devices.https://jopn.marvdasht.iau.ir/article_4507_02a2fe9968cbee35d64c3e1b96767d11.pdfsnc and snge nanoribbonelectronic propertiesdielectric functionfirst-principles study |
| spellingShingle | samira damizadeh Maryam Nayeri Forough Kalantari Fotooh somayeh fotoohi Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study Journal of Optoelectronical Nanostructures snc and snge nanoribbon electronic properties dielectric function first-principles study |
| title | Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study |
| title_full | Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study |
| title_fullStr | Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study |
| title_full_unstemmed | Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study |
| title_short | Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study |
| title_sort | electronic and optical properties of snge and snc nanoribbons a first principles study |
| topic | snc and snge nanoribbon electronic properties dielectric function first-principles study |
| url | https://jopn.marvdasht.iau.ir/article_4507_02a2fe9968cbee35d64c3e1b96767d11.pdf |
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