Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Abstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent...

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Bibliographic Details
Main Authors: Qiuhong Tan, Qianjin Wang, Yingkai Liu, Hailong Yan, Wude Cai, Zhikun Yang
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Series:Nanoscale Research Letters
Subjects:
Ferroelectric field-effect transistors (FeFETs)
Single-walled carbon nanotube (SWCNT)
Nonvolatile memory
Ferroelectric film
Online Access:http://link.springer.com/article/10.1186/s11671-018-2534-1

Internet

http://link.springer.com/article/10.1186/s11671-018-2534-1

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