Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Abstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent...

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Bibliographic Details
Main Authors: Qiuhong Tan, Qianjin Wang, Yingkai Liu, Hailong Yan, Wude Cai, Zhikun Yang
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Series:Nanoscale Research Letters
Subjects:
Ferroelectric field-effect transistors (FeFETs)
Single-walled carbon nanotube (SWCNT)
Nonvolatile memory
Ferroelectric film
Online Access:http://link.springer.com/article/10.1186/s11671-018-2534-1
Description
Summary:Abstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10−9 A/cm2 at a gate voltage of − 3 V.
ISSN:1931-7573
1556-276X

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