Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer
Abstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-04-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2534-1 |
| _version_ | 1797762724010131456 |
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| author | Qiuhong Tan Qianjin Wang Yingkai Liu Hailong Yan Wude Cai Zhikun Yang |
| author_facet | Qiuhong Tan Qianjin Wang Yingkai Liu Hailong Yan Wude Cai Zhikun Yang |
| author_sort | Qiuhong Tan |
| collection | DOAJ |
| description | Abstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10−9 A/cm2 at a gate voltage of − 3 V. |
| first_indexed | 2024-03-12T19:32:28Z |
| format | Article |
| id | doaj.art-589d01de094e4bde88ff17d7e994f3e3 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:32:28Z |
| publishDate | 2018-04-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-589d01de094e4bde88ff17d7e994f3e32023-08-02T04:25:57ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-04-011311710.1186/s11671-018-2534-1Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control LayerQiuhong Tan0Qianjin Wang1Yingkai Liu2Hailong Yan3Wude Cai4Zhikun Yang5School of Energy and Environment Science, Yunnan Normal UniversityYunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal UniversityYunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal UniversityCollege of Physics and Electronic Engineering, Xinyang Normal UniversityCollege of Physics and Electronic Information, Yunnan Normal UniversityCollege of Physics and Electronic Information, Yunnan Normal UniversityAbstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10−9 A/cm2 at a gate voltage of − 3 V.http://link.springer.com/article/10.1186/s11671-018-2534-1Ferroelectric field-effect transistors (FeFETs)Single-walled carbon nanotube (SWCNT)Nonvolatile memoryFerroelectric film |
| spellingShingle | Qiuhong Tan Qianjin Wang Yingkai Liu Hailong Yan Wude Cai Zhikun Yang Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer Nanoscale Research Letters Ferroelectric field-effect transistors (FeFETs) Single-walled carbon nanotube (SWCNT) Nonvolatile memory Ferroelectric film |
| title | Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer |
| title_full | Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer |
| title_fullStr | Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer |
| title_full_unstemmed | Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer |
| title_short | Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer |
| title_sort | single walled carbon nanotube dominated micron wide stripe patterned based ferroelectric field effect transistors with hfo2 defect control layer |
| topic | Ferroelectric field-effect transistors (FeFETs) Single-walled carbon nanotube (SWCNT) Nonvolatile memory Ferroelectric film |
| url | http://link.springer.com/article/10.1186/s11671-018-2534-1 |
| work_keys_str_mv | AT qiuhongtan singlewalledcarbonnanotubedominatedmicronwidestripepatternedbasedferroelectricfieldeffecttransistorswithhfo2defectcontrollayer AT qianjinwang singlewalledcarbonnanotubedominatedmicronwidestripepatternedbasedferroelectricfieldeffecttransistorswithhfo2defectcontrollayer AT yingkailiu singlewalledcarbonnanotubedominatedmicronwidestripepatternedbasedferroelectricfieldeffecttransistorswithhfo2defectcontrollayer AT hailongyan singlewalledcarbonnanotubedominatedmicronwidestripepatternedbasedferroelectricfieldeffecttransistorswithhfo2defectcontrollayer AT wudecai singlewalledcarbonnanotubedominatedmicronwidestripepatternedbasedferroelectricfieldeffecttransistorswithhfo2defectcontrollayer AT zhikunyang singlewalledcarbonnanotubedominatedmicronwidestripepatternedbasedferroelectricfieldeffecttransistorswithhfo2defectcontrollayer |