Tailoring dielectric permittivity of epitaxial Gd-doped CeO2−x films by ionic defects

Tailoring dielectric permittivity of epitaxial Gd-doped CeO2−x films by ionic defects

Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and funct...

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Chi tiết về thư mục
Những tác giả chính: A Palliotto, Y Wu, A D Rata, A Herklotz, S Zhou, K Dörr, P Muralt, D-S Park
Định dạng: Bài viết
Ngôn ngữ:English
Được phát hành: IOP Publishing 2024-01-01
Loạt:JPhys Energy
Những chủ đề:
functional oxides
doped ceria
ionic defects
thin film growth
dielectric permittivity
Truy cập trực tuyến:https://doi.org/10.1088/2515-7655/ad2452

Internet

https://doi.org/10.1088/2515-7655/ad2452

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