Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs
In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how t...
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| Format: | Article |
| Language: | English |
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MDPI AG
2017-03-01
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| Series: | Energies |
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| Online Access: | http://www.mdpi.com/1996-1073/10/3/384 |
| _version_ | 1818039722174316544 |
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| author | Nick Baker Haoze Luo Francesco Iannuzzo |
| author_facet | Nick Baker Haoze Luo Francesco Iannuzzo |
| author_sort | Nick Baker |
| collection | DOAJ |
| description | In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device. |
| first_indexed | 2024-12-10T08:03:09Z |
| format | Article |
| id | doaj.art-589f71858c9d49f481789a337d876dae |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-12-10T08:03:09Z |
| publishDate | 2017-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-589f71858c9d49f481789a337d876dae2022-12-22T01:56:45ZengMDPI AGEnergies1996-10732017-03-0110338410.3390/en10030384en10030384Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETsNick Baker0Haoze Luo1Francesco Iannuzzo2Department of Energy Technology, Aalborg University, Aalborg 9220, DenmarkDepartment of Energy Technology, Aalborg University, Aalborg 9220, DenmarkDepartment of Energy Technology, Aalborg University, Aalborg 9220, DenmarkIn fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.http://www.mdpi.com/1996-1073/10/3/384Silicon Carbide MOSFETreliabilitypower semiconductors |
| spellingShingle | Nick Baker Haoze Luo Francesco Iannuzzo Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs Energies Silicon Carbide MOSFET reliability power semiconductors |
| title | Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs |
| title_full | Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs |
| title_fullStr | Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs |
| title_full_unstemmed | Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs |
| title_short | Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs |
| title_sort | simultaneous on state voltage and bond wire resistance monitoring of silicon carbide mosfets |
| topic | Silicon Carbide MOSFET reliability power semiconductors |
| url | http://www.mdpi.com/1996-1073/10/3/384 |
| work_keys_str_mv | AT nickbaker simultaneousonstatevoltageandbondwireresistancemonitoringofsiliconcarbidemosfets AT haozeluo simultaneousonstatevoltageandbondwireresistancemonitoringofsiliconcarbidemosfets AT francescoiannuzzo simultaneousonstatevoltageandbondwireresistancemonitoringofsiliconcarbidemosfets |